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ME7807S-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME7807S-G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 29 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 44.9 nS
   Cossⓘ - Capacitancia de salida: 221 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: DFN3.3X3.3
 

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ME7807S-G Datasheet (PDF)

 ..1. Size:959K  matsuki electric
 me7807s me7807s-g.pdf pdf_icon

ME7807S-G

ME7807S/ME7807S-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7807S is the P-Channel logic enhancement mode power field RDS(ON) 15m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 29.5m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low

 9.1. Size:1296K  1
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ME7807S-G

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES RDS(ON) 16m@VGS=10V The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 25m@ VGS=4.5V effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

 9.2. Size:890K  matsuki electric
 me7805s me7805s-g.pdf pdf_icon

ME7807S-G

ME7805S/ME7805S-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7805S is the P-Channel logic enhancement mode power field RDS(ON) 7m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 12m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS

 9.3. Size:1242K  matsuki electric
 me7804s-g.pdf pdf_icon

ME7807S-G

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected DGENERAL DESCRIPTION FEATURES The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 16m@VGS=10Veffect transistors are produced using high cell density, DMOS trench RDS(ON) 25m@ VGS=4.5Vtechnology. This high density process is especially tailored to minimize on-state resistance. These devices are pa

MOSTRAR MÁS

Otros transistores... ME7705-G , ME7707 , ME7707-G , ME7732-G , ME7802S-G , ME7805S , ME7805S-G , ME7807S , IRF1405 , ME78101S-G , ME7810S-G , ME7820S-G , ME78241S-G , ME7845S , ME7845S-G , ME7890ED , ME7890ED-G .

History: MX2N4860 | AON6290 | BF2040R | 2SK2581 | TPW65R040M | ME2309 | IPP60R280C6

 

 
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