ME7807S/ME7807S-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7807S is the P-Channel logic enhancement mode power field RDS(ON) 15m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 29.5m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES RDS(ON) 16m@VGS=10V The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 25m@ VGS=4.5V effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

ME7805S/ME7805S-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7805S is the P-Channel logic enhancement mode power field RDS(ON) 7m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 12m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected DGENERAL DESCRIPTION FEATURES The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 16m@VGS=10Veffect transistors are produced using high cell density, DMOS trench RDS(ON) 25m@ VGS=4.5Vtechnology. This high density process is especially tailored to minimize on-state resistance. These devices are pa

ME7802S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)4.6m@VGS=10V The ME7802S-G is the N-Channel logic enhancement mode power RDS(ON)6.8m@VGS=4.5V field effect transistors are produced using high cell density , DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailo