ME7820S-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME7820S-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 96 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 358 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Paquete / Cubierta: DFN3X3
ME7820S-G Datasheet (PDF)
me7820s-g.pdf

ME7820S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7820S-G is the N-Channel logic enhancement mode power RDS(ON)3.5m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)5.5m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)m
me78241s-g.pdf

ME78241S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME78241S-G is the N-Channel logic enhancement mode power RDS(ON)3m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)4.2m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)m
Otros transistores... ME7732-G , ME7802S-G , ME7805S , ME7805S-G , ME7807S , ME7807S-G , ME78101S-G , ME7810S-G , 8N60 , ME78241S-G , ME7845S , ME7845S-G , ME7890ED , ME7890ED-G , ME7900EN , ME7900EN-G , ME7910D .
History: AP4528GM | 2SK210



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