ME7820S-G Todos los transistores

 

ME7820S-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME7820S-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 96 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 358 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: DFN3X3

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ME7820S-G Datasheet (PDF)

 ..1. Size:878K  matsuki electric
me7820s-g.pdf

ME7820S-G
ME7820S-G

ME7820S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7820S-G is the N-Channel logic enhancement mode power RDS(ON)3.5m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)5.5m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)m

 9.1. Size:1167K  matsuki electric
me78241s-g.pdf

ME7820S-G
ME7820S-G

ME78241S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME78241S-G is the N-Channel logic enhancement mode power RDS(ON)3m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)4.2m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)m

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