ME80N08AH-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME80N08AH-G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 129 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36.3 nS

Cossⓘ - Capacitancia de salida: 592 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: TO263

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ME80N08AH-G datasheet

 ..1. Size:871K  matsuki electric
 me80n08ah me80n08ah-g.pdf pdf_icon

ME80N08AH-G

ME80N08AH/ME80N08AH-G 80V N-Channel Enhancement Mode GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08AH is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high

 6.1. Size:1244K  matsuki electric
 me80n08a me80n08a-g.pdf pdf_icon

ME80N08AH-G

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p

 6.2. Size:1055K  matsuki electric
 me80n08af me80n08af-g.pdf pdf_icon

ME80N08AH-G

ME80N08AF/ME80N08AF-G N-Channel 80V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08AF is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densi

 9.1. Size:1006K  1
 me80n75f me80n75fg.pdf pdf_icon

ME80N08AH-G

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 10m @VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

MOSTRAR MÁS

Otros transistores... ME7900EN-G, ME7910D, ME7910D-G, ME8029, ME8029-G, ME80N08AF, ME80N08AF-G, ME80N08AH, IRF840, ME8117, ME8117-G, ME8205B, ME8205B-G, ME9435AS, ME9435AS-G, ME95N10F, ME95N10F-G