Справочник MOSFET. ME80N08AH-G

 

ME80N08AH-G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ME80N08AH-G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 129 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 36.3 ns
   Cossⓘ - Выходная емкость: 592 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для ME80N08AH-G

   - подбор ⓘ MOSFET транзистора по параметрам

 

ME80N08AH-G Datasheet (PDF)

 ..1. Size:871K  matsuki electric
 me80n08ah me80n08ah-g.pdf pdf_icon

ME80N08AH-G

ME80N08AH/ME80N08AH-G 80V N-Channel Enhancement Mode GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08AH is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high

 6.1. Size:1244K  matsuki electric
 me80n08a me80n08a-g.pdf pdf_icon

ME80N08AH-G

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p

 6.2. Size:1055K  matsuki electric
 me80n08af me80n08af-g.pdf pdf_icon

ME80N08AH-G

ME80N08AF/ME80N08AF-G N-Channel 80V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08AF is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densi

 9.1. Size:1006K  1
 me80n75f me80n75fg.pdf pdf_icon

ME80N08AH-G

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

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Другие MOSFET... ME7900EN-G , ME7910D , ME7910D-G , ME8029 , ME8029-G , ME80N08AF , ME80N08AF-G , ME80N08AH , IRF840 , ME8117 , ME8117-G , ME8205B , ME8205B-G , ME9435AS , ME9435AS-G , ME95N10F , ME95N10F-G .

History: APT50M60L2VRG | OSG65R070FT3F | SCH1302 | RJK6011DJE | LSB60R030HT | HM9435B | RSH070N05TB1

 

 
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