ME95N10F Todos los transistores

 

ME95N10F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME95N10F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 61.9 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 25 V
   Corriente continua de drenaje |Id|: 56.3 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 111 nS
   Conductancia de drenaje-sustrato (Cd): 868 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0085 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET ME95N10F

 

ME95N10F Datasheet (PDF)

 ..1. Size:1058K  matsuki electric
me95n10f me95n10f-g.pdf

ME95N10F ME95N10F

ME95N10F/ME95N10F-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)8.5m@VGS=10V The ME95N10F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process

 9.1. Size:1244K  matsuki electric
me95n03 me95n03-g.pdf

ME95N10F ME95N10F

ME95N03/ME95N03-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME95N03 is the N-Channel logic enhancement mode power RDS(ON)3.2m@VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON)4.2m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD

 9.2. Size:896K  matsuki electric
me95n03t me95n03t-g.pdf

ME95N10F ME95N10F

ME95N03T/ME95N03T-GN-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6m@VGS=10V The ME95N03T is the N-Channel logic enhancement mode power RDS(ON)9m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tail

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
Back to Top

 


ME95N10F
  ME95N10F
  ME95N10F
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C

 

 

 
Back to Top