ME95N10F Datasheet and Replacement. Cross Reference Search

ME95N10F Datasheet (PDF)

..1. Size:1058K matsuki electric
me95n10f me95n10f-g.pdf pdf_icon

ME95N10F/ME95N10F-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)8.5m@VGS=10V The ME95N10F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process

9.1. Size:1244K matsuki electric
me95n03 me95n03-g.pdf pdf_icon

ME95N03/ME95N03-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME95N03 is the N-Channel logic enhancement mode power RDS(ON)3.2m@VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON)4.2m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD

9.2. Size:896K matsuki electric
me95n03t me95n03t-g.pdf pdf_icon

ME95N03T/ME95N03T-GN-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6m@VGS=10V The ME95N03T is the N-Channel logic enhancement mode power RDS(ON)9m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tail

Datasheet: ME80N08AH , ME80N08AH-G , ME8117 , ME8117-G , ME8205B , ME8205B-G , ME9435AS , ME9435AS-G , IRFP460 , ME95N10F-G , ME96N03-G , MEE2348 , MEE2348-G , MEE3710T , MEE3712F , MEE3712H , MEE3712T .