MEE4292-G Todos los transistores

 

MEE4292-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MEE4292-G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.78 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 48.5 nS

Cossⓘ - Capacitancia de salida: 739 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: SOP8

 Búsqueda de reemplazo de MEE4292-G MOSFET

- Selecciónⓘ de transistores por parámetros

 

MEE4292-G datasheet

 ..1. Size:866K  matsuki electric
 mee4292-g.pdf pdf_icon

MEE4292-G

MEE4292-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292-G is a N-Channel enhancement mode power field effect RDS(ON) 11m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON) on

 7.1. Size:1157K  matsuki electric
 mee4292ht.pdf pdf_icon

MEE4292-G

MEE4292HT N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292HT is a N-Channel enhancement mode power field effect RDS(ON) 12m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and

 7.2. Size:918K  matsuki electric
 mee4292p-g.pdf pdf_icon

MEE4292-G

MEE4292P-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292P-G is a N-Channel enhancement mode power field effect RDS(ON) 12m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON 17.2m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 7.3. Size:895K  matsuki electric
 mee4292hp-g.pdf pdf_icon

MEE4292-G

MEE4292HP-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292HP-G is a N-Channel enhancement mode power field RDS(ON) 12m @VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

MOSTRAR MÁS

Otros transistores... MEE2348-G , MEE3710T , MEE3712F , MEE3712H , MEE3712T , MEE3716F , MEE3716T , MEE3718T , 2N7000 , MEE4292HP-G , MEE4292HT , MEE4292K-G , MEE4292P-G , MEE4292T , MEE42942-G , MEE4294HP-G , MEE4294HT .

History: SVF840MJ

 

 

 


History: SVF840MJ

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10

 

 

 

Popular searches

c828 transistor | c4467 | c2383 transistor | 2n3055 equivalent | s9015 datasheet | 2n6488 | 30j127 datasheet | 2sc1116a

 

 

↑ Back to Top
.