MEE4292-G MOSFET Datasheet: N-Ch, 100V, 11.2A. Full specification with pinout and replacement list

MEE4292-G Specs and Replacement

Type Designator: MEE4292-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48.5 nS

Cossⓘ - Output Capacitance: 739 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: SOP8

MEE4292-G substitution

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MEE4292-G datasheet

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MEE4292-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292-G is a N-Channel enhancement mode power field effect RDS(ON) 11m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON) on... See More ⇒

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MEE4292HT N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292HT is a N-Channel enhancement mode power field effect RDS(ON) 12m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and... See More ⇒

7.2. Size:918K matsuki electric
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MEE4292P-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292P-G is a N-Channel enhancement mode power field effect RDS(ON) 12m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON 17.2m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON) ... See More ⇒

7.3. Size:895K matsuki electric
mee4292hp-g.pdf pdf_icon

MEE4292HP-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292HP-G is a N-Channel enhancement mode power field RDS(ON) 12m @VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance... See More ⇒