All MOSFET. MEE4292-G Datasheet

 

MEE4292-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: MEE4292-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 11.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48.3 nC
   trⓘ - Rise Time: 48.5 nS
   Cossⓘ - Output Capacitance: 739 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOP8

 MEE4292-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MEE4292-G Datasheet (PDF)

 ..1. Size:866K  matsuki electric
 mee4292-g.pdf

MEE4292-G MEE4292-G

MEE4292-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292-G is a N-Channel enhancement mode power field effect RDS(ON)11m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)on

 7.1. Size:1157K  matsuki electric
 mee4292ht.pdf

MEE4292-G MEE4292-G

MEE4292HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HT is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and

 7.2. Size:918K  matsuki electric
 mee4292p-g.pdf

MEE4292-G MEE4292-G

MEE4292P-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292P-G is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON17.2m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 7.3. Size:895K  matsuki electric
 mee4292hp-g.pdf

MEE4292-G MEE4292-G

MEE4292HP-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HP-G is a N-Channel enhancement mode power field RDS(ON)12m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

 7.4. Size:939K  matsuki electric
 mee4292k-g.pdf

MEE4292-G MEE4292-G

MEE4292K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292K-G is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON17.2m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 7.5. Size:1169K  matsuki electric
 mee4292t.pdf

MEE4292-G MEE4292-G

MEE4292T N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292T is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)17.2m@VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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