All MOSFET. MEE4292-G Datasheet

 

MEE4292-G Datasheet and Replacement


   Type Designator: MEE4292-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48.5 nS
   Cossⓘ - Output Capacitance: 739 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOP8
 

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MEE4292-G Datasheet (PDF)

 ..1. Size:866K  matsuki electric
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MEE4292-G

MEE4292-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292-G is a N-Channel enhancement mode power field effect RDS(ON)11m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)on

 7.1. Size:1157K  matsuki electric
 mee4292ht.pdf pdf_icon

MEE4292-G

MEE4292HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HT is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and

 7.2. Size:918K  matsuki electric
 mee4292p-g.pdf pdf_icon

MEE4292-G

MEE4292P-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292P-G is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON17.2m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 7.3. Size:895K  matsuki electric
 mee4292hp-g.pdf pdf_icon

MEE4292-G

MEE4292HP-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HP-G is a N-Channel enhancement mode power field RDS(ON)12m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

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Datasheet: MEE2348-G , MEE3710T , MEE3712F , MEE3712H , MEE3712T , MEE3716F , MEE3716T , MEE3718T , IRF9540 , MEE4292HP-G , MEE4292HT , MEE4292K-G , MEE4292P-G , MEE4292T , MEE42942-G , MEE4294HP-G , MEE4294HT .

History: SMF12N65 | CEU4311 | FTU36N06N | SSM72T02GH | SCT3160KL | MTDE5P10N3 | IXFB100N50P

Keywords - MEE4292-G MOSFET datasheet

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