MEE4292HT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MEE4292HT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 166 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 81 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 48.3 nC
   trⓘ - Tiempo de subida: 48.5 nS
   Cossⓘ - Capacitancia de salida: 739 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET MEE4292HT

MEE4292HT Datasheet (PDF)

..1. Size:1157K matsuki electric
mee4292ht.pdf

MEE4292HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HT is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and

6.1. Size:895K matsuki electric
mee4292hp-g.pdf

MEE4292HP-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HP-G is a N-Channel enhancement mode power field RDS(ON)12m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

7.1. Size:866K matsuki electric
mee4292-g.pdf

MEE4292-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292-G is a N-Channel enhancement mode power field effect RDS(ON)11m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)on

7.2. Size:918K matsuki electric
mee4292p-g.pdf

MEE4292P-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292P-G is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON17.2m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

7.3. Size:939K matsuki electric
mee4292k-g.pdf

MEE4292K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292K-G is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON17.2m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

7.4. Size:1169K matsuki electric
mee4292t.pdf

MEE4292T N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292T is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)17.2m@VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

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