MEE4292HT Todos los transistores

 

MEE4292HT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MEE4292HT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 166 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 81 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 48.5 nS
   Cossⓘ - Capacitancia de salida: 739 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de MEE4292HT MOSFET

   - Selección ⓘ de transistores por parámetros

 

MEE4292HT Datasheet (PDF)

 ..1. Size:1157K  matsuki electric
 mee4292ht.pdf pdf_icon

MEE4292HT

MEE4292HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HT is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and

 6.1. Size:895K  matsuki electric
 mee4292hp-g.pdf pdf_icon

MEE4292HT

MEE4292HP-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HP-G is a N-Channel enhancement mode power field RDS(ON)12m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

 7.1. Size:866K  matsuki electric
 mee4292-g.pdf pdf_icon

MEE4292HT

MEE4292-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292-G is a N-Channel enhancement mode power field effect RDS(ON)11m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)on

 7.2. Size:918K  matsuki electric
 mee4292p-g.pdf pdf_icon

MEE4292HT

MEE4292P-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292P-G is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON17.2m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

MOSTRAR MÁS

Otros transistores... MEE3712F , MEE3712H , MEE3712T , MEE3716F , MEE3716T , MEE3718T , MEE4292-G , MEE4292HP-G , 2SK3878 , MEE4292K-G , MEE4292P-G , MEE4292T , MEE42942-G , MEE4294HP-G , MEE4294HT , MEE4294K , MEE4294K2 .

History: IRFH5006TRPBF | CEB02N6G | HCD80R1K4 | HM4412A | 50N60L-TM3-T | WSD80100DN56 | FM6L52020L

 

 
Back to Top

 


 
.