All MOSFET. MEE4292HT Datasheet

 

MEE4292HT Datasheet and Replacement


   Type Designator: MEE4292HT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 81 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48.5 nS
   Cossⓘ - Output Capacitance: 739 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220
 

 MEE4292HT substitution

   - MOSFET ⓘ Cross-Reference Search

 

MEE4292HT Datasheet (PDF)

 ..1. Size:1157K  matsuki electric
 mee4292ht.pdf pdf_icon

MEE4292HT

MEE4292HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HT is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and

 6.1. Size:895K  matsuki electric
 mee4292hp-g.pdf pdf_icon

MEE4292HT

MEE4292HP-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HP-G is a N-Channel enhancement mode power field RDS(ON)12m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

 7.1. Size:866K  matsuki electric
 mee4292-g.pdf pdf_icon

MEE4292HT

MEE4292-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292-G is a N-Channel enhancement mode power field effect RDS(ON)11m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)on

 7.2. Size:918K  matsuki electric
 mee4292p-g.pdf pdf_icon

MEE4292HT

MEE4292P-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292P-G is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON17.2m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

SHOW MORE

Datasheet: MEE3712F , MEE3712H , MEE3712T , MEE3716F , MEE3716T , MEE3718T , MEE4292-G , MEE4292HP-G , 8205A , MEE4292K-G , MEE4292P-G , MEE4292T , MEE42942-G , MEE4294HP-G , MEE4294HT , MEE4294K , MEE4294K2 .

History: 3N45 | STM6928

Keywords - MEE4292HT MOSFET datasheet

 MEE4292HT cross reference
 MEE4292HT equivalent finder
 MEE4292HT lookup
 MEE4292HT substitution
 MEE4292HT replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.