All MOSFET. MEE4292HT Datasheet

 

MEE4292HT Datasheet and Replacement


   Type Designator: MEE4292HT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 81 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 48.5 nS
   Cossⓘ - Output Capacitance: 739 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220
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MEE4292HT Datasheet (PDF)

 ..1. Size:1157K  matsuki electric
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MEE4292HT

MEE4292HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HT is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and

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MEE4292HT

MEE4292HP-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HP-G is a N-Channel enhancement mode power field RDS(ON)12m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

 7.1. Size:866K  matsuki electric
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MEE4292HT

MEE4292-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292-G is a N-Channel enhancement mode power field effect RDS(ON)11m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)on

 7.2. Size:918K  matsuki electric
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MEE4292HT

MEE4292P-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292P-G is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON17.2m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2300 | PHW11N50E | GSM2333A | 2N6784 | 2N7107 | IRC6405 | CSD17576Q5B

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