MEE4292K-G Todos los transistores

 

MEE4292K-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MEE4292K-G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 59.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 48.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 48.5 nS

Cossⓘ - Capacitancia de salida: 739 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO252

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MEE4292K-G datasheet

 ..1. Size:939K  matsuki electric
 mee4292k-g.pdf pdf_icon

MEE4292K-G

MEE4292K-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292K-G is a N-Channel enhancement mode power field effect RDS(ON) 12m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON 17.2m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 7.1. Size:866K  matsuki electric
 mee4292-g.pdf pdf_icon

MEE4292K-G

MEE4292-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292-G is a N-Channel enhancement mode power field effect RDS(ON) 11m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON) on

 7.2. Size:1157K  matsuki electric
 mee4292ht.pdf pdf_icon

MEE4292K-G

MEE4292HT N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292HT is a N-Channel enhancement mode power field effect RDS(ON) 12m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and

 7.3. Size:918K  matsuki electric
 mee4292p-g.pdf pdf_icon

MEE4292K-G

MEE4292P-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292P-G is a N-Channel enhancement mode power field effect RDS(ON) 12m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON 17.2m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

MOSTRAR MÁS

Otros transistores... MEE3712H , MEE3712T , MEE3716F , MEE3716T , MEE3718T , MEE4292-G , MEE4292HP-G , MEE4292HT , 7N65 , MEE4292P-G , MEE4292T , MEE42942-G , MEE4294HP-G , MEE4294HT , MEE4294K , MEE4294K2 , MEE4294K2-G .

History: JMSH2010PS | TPC6003 | 2SK2395

 

 

 

 

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