Справочник MOSFET. MEE4292K-G

 

MEE4292K-G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MEE4292K-G
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 59.5 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 48.6 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 48.3 nC
   Время нарастания (tr): 48.5 ns
   Выходная емкость (Cd): 739 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
   Тип корпуса: TO252

 Аналог (замена) для MEE4292K-G

 

 

MEE4292K-G Datasheet (PDF)

 ..1. Size:939K  matsuki electric
 mee4292k-g.pdf

MEE4292K-G MEE4292K-G

MEE4292K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292K-G is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON17.2m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 7.1. Size:866K  matsuki electric
 mee4292-g.pdf

MEE4292K-G MEE4292K-G

MEE4292-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292-G is a N-Channel enhancement mode power field effect RDS(ON)11m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)on

 7.2. Size:1157K  matsuki electric
 mee4292ht.pdf

MEE4292K-G MEE4292K-G

MEE4292HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HT is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and

 7.3. Size:918K  matsuki electric
 mee4292p-g.pdf

MEE4292K-G MEE4292K-G

MEE4292P-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292P-G is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON17.2m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 7.4. Size:895K  matsuki electric
 mee4292hp-g.pdf

MEE4292K-G MEE4292K-G

MEE4292HP-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HP-G is a N-Channel enhancement mode power field RDS(ON)12m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

 7.5. Size:1169K  matsuki electric
 mee4292t.pdf

MEE4292K-G MEE4292K-G

MEE4292T N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292T is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)17.2m@VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

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History: ELM544634A

 

 
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