MEE4294HP-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MEE4294HP-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 59.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 53 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 69.5 nS
Cossⓘ - Capacitancia de salida: 868 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de MEE4294HP-G MOSFET
MEE4294HP-G Datasheet (PDF)
mee4294hp-g.pdf

MEE4294HP-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10VThe MEE4294HP-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistor, using Force-MOS patented Extended Trench Gate Exceptional on-resistance and maximum DC current(ETG) technology. This advanced technology is esp
mee4294ht.pdf

MEE4294HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294HT is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and
mee4294k mee4294k-g.pdf

MEE4294K/MEE4294K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294K-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely
mee4294k2 mee4294k2-g.pdf

MEE4294K2/MEE4294K2-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294K2-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extreme
Otros transistores... MEE3718T , MEE4292-G , MEE4292HP-G , MEE4292HT , MEE4292K-G , MEE4292P-G , MEE4292T , MEE42942-G , 2N7000 , MEE4294HT , MEE4294K , MEE4294K2 , MEE4294K2-G , MEE4294K-G , MEE4294P2-G , MEE4294P-G , MEE4294T2 .
History: STD25NF10
History: STD25NF10



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