STM8309 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GreenProductSTM8309SamHop Microelectronics Corp.Oct.13, 2006Dual Enhancement Mode Field Effect Transistor ( N and P Channel)PRODUCT SUMMARY (N-Channel) (P-Channel)PRODUCT SUMMARYVDSS ID RDS(ON) ( m ) Max VDSS ID RDS(ON) ( m ) Max23 @ VGS = 10V 35 @ VGS = -10V-30V -6A30V7A30 @ VGS = 4.5V 52 @ VGS = -4.5VD1 D1 D2 D28 7 6 5SO-811 2 3 4S1 G1 S2 G2ABSO

GreenProductSTM8300aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID46 @ VGS=10V 56 @ VGS=-10V30V 5.3A -30V -4.7A65 @ VGS=4.5V 90 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25

GreenProductS TM8306S amHop Microelectronics C orp.Mar.06, 2006 ver1.1Dual E nhancement Mode Field Effect Transistor ( N and P Channel)PR ODUC T S UMMAR Y (N-C hannel) (PPR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max26 @ VG S = 10V 38 @ VG S = -10V7A -30V -6A30V35 @ VG S = 4.5 52 @ VG S = -4.5VD1 D1 D2 D28 7 6 5S O-8

GreenProductSTM8324aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID31 @ VGS=10V 35 @ VGS=-10V30V 6.5A -30V -6A42 @ VGS=4.5V 53 @ VGS=-4.5V5 4D2 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C

GreenProductSTM8360TaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID29 @ VGS=10V 42 @ VGS=-10V40V 6.6A-40V -5.5A45 @ VGS=4.5V 65 @ VGS=-4.5VD2 5 4 G 2D2 6 3 S 2D1 7 2G 1S O-8D1 8 1S 11(TC=25C

GreenProductSTM8362aS mHop Microelectronics C orp.Ver 1.1Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID29 @ VGS=10V 38 @ VGS=-10V40V 6.6A-40V -5.8A45 @ VGS=4.5V 60 @ VGS=-4.5VD2 5 4 G 26D2 3 S 2D1 7 2G 1SO-8D1 8 1S 11(TC=25C un

S T M8358SS amHop Microelectronics C orp. Oct.28, 2005Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)(N-C hannel) (PP R ODUC T S UMMAR Y P R ODUC T S UMMAR Y -C hannel)V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max 48 @ V G S = -10V25 @ VG S = 10V-30V -5.2A30V 7.2A 72 @ V G S = -4.5V36 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811

GreenProductSTM8319aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID25 @ VGS=10V 35 @ VGS=-10V30V 7A -30V -6A30 @ VGS=4.5V 52 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C un

STM8320aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID23 @ VGS=10V 35 @ VGS=-10V30V 7.5A -30V -6.0A35 @ VGS=4.5V 55 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi

GreenProductSTM8330aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID35 @ VGS=10V76 @ VGS=-10V30V 6A-30V -4.2A55 @ VGS=4.5V 138 @ VGS=-4.5VD2 5 4 G 2D2 6 3 S 2D1 7 2G 1S O-8D1 8 1 S 11C(TC=25

STM8362www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

STM8319www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS