STM8309 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STM8309
Тип транзистора: MOSFET
Полярность: NP
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1.9 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Общий заряд затвора (Qg): 5.5 nC
Выходная емкость (Cd): 190 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.023 Ohm
Тип корпуса: SOP8
STM8309 Datasheet (PDF)
stm8309.pdf
GreenProductSTM8309SamHop Microelectronics Corp.Oct.13, 2006Dual Enhancement Mode Field Effect Transistor ( N and P Channel)PRODUCT SUMMARY (N-Channel) (P-Channel)PRODUCT SUMMARYVDSS ID RDS(ON) ( m ) Max VDSS ID RDS(ON) ( m ) Max23 @ VGS = 10V 35 @ VGS = -10V-30V -6A30V7A30 @ VGS = 4.5V 52 @ VGS = -4.5VD1 D1 D2 D28 7 6 5SO-811 2 3 4S1 G1 S2 G2ABSO
stm8300.pdf
GreenProductSTM8300aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID46 @ VGS=10V 56 @ VGS=-10V30V 5.3A -30V -4.7A65 @ VGS=4.5V 90 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25
stm8306.pdf
GreenProductS TM8306S amHop Microelectronics C orp.Mar.06, 2006 ver1.1Dual E nhancement Mode Field Effect Transistor ( N and P Channel)PR ODUC T S UMMAR Y (N-C hannel) (PPR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max26 @ VG S = 10V 38 @ VG S = -10V7A -30V -6A30V35 @ VG S = 4.5 52 @ VG S = -4.5VD1 D1 D2 D28 7 6 5S O-8
stm8324.pdf
GreenProductSTM8324aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID31 @ VGS=10V 35 @ VGS=-10V30V 6.5A -30V -6A42 @ VGS=4.5V 53 @ VGS=-4.5V5 4D2 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C
stm8360t.pdf
GreenProductSTM8360TaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID29 @ VGS=10V 42 @ VGS=-10V40V 6.6A-40V -5.5A45 @ VGS=4.5V 65 @ VGS=-4.5VD2 5 4 G 2D2 6 3 S 2D1 7 2G 1S O-8D1 8 1S 11(TC=25C
stm8362.pdf
GreenProductSTM8362aS mHop Microelectronics C orp.Ver 1.1Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID29 @ VGS=10V 38 @ VGS=-10V40V 6.6A-40V -5.8A45 @ VGS=4.5V 60 @ VGS=-4.5VD2 5 4 G 26D2 3 S 2D1 7 2G 1SO-8D1 8 1S 11(TC=25C un
stm8358s.pdf
S T M8358SS amHop Microelectronics C orp. Oct.28, 2005Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)(N-C hannel) (PP R ODUC T S UMMAR Y P R ODUC T S UMMAR Y -C hannel)V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max 48 @ V G S = -10V25 @ VG S = 10V-30V -5.2A30V 7.2A 72 @ V G S = -4.5V36 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811
stm8319.pdf
GreenProductSTM8319aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID25 @ VGS=10V 35 @ VGS=-10V30V 7A -30V -6A30 @ VGS=4.5V 52 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C un
stm8320.pdf
STM8320aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID23 @ VGS=10V 35 @ VGS=-10V30V 7.5A -30V -6.0A35 @ VGS=4.5V 55 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi
stm8330.pdf
GreenProductSTM8330aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID35 @ VGS=10V76 @ VGS=-10V30V 6A-30V -4.2A55 @ VGS=4.5V 138 @ VGS=-4.5VD2 5 4 G 2D2 6 3 S 2D1 7 2G 1S O-8D1 8 1 S 11C(TC=25
stm8362.pdf
STM8362www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS
stm8319.pdf
STM8319www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: CSP10N4P2
History: CSP10N4P2
Список транзисторов
Обновления
MOSFET: NCES120R062T4 | NCES120R036T4 | NCEPB303GU | NCEPB302G | NCEP8818AS | NCEP8814AS | NCEP85T30T | NCEP85T30LL | NCEP85T25VD | NCEP85T25 | NCEP85T15D | NCEP85T10G | NCEP8588 | NCEP60T20LL | NCEP60T20D | NCEP60T18D