MEE4294P2-G Todos los transistores

 

MEE4294P2-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MEE4294P2-G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 69.5 nS

Cossⓘ - Capacitancia de salida: 868 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm

Encapsulados: TO251

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MEE4294P2-G datasheet

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MEE4294P2-G

MEE4294P2-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294P2-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS

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MEE4294P2-G

MEE4294P-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294P-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O

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 mee4294k mee4294k-g.pdf pdf_icon

MEE4294P2-G

MEE4294K/MEE4294K-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294K-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely

 7.2. Size:931K  matsuki electric
 mee4294k2 mee4294k2-g.pdf pdf_icon

MEE4294P2-G

MEE4294K2/MEE4294K2-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294K2-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extreme

MOSTRAR MÁS

Otros transistores... MEE4292T , MEE42942-G , MEE4294HP-G , MEE4294HT , MEE4294K , MEE4294K2 , MEE4294K2-G , MEE4294K-G , IRLB4132 , MEE4294P-G , MEE4294T2 , MEE4298-G , MEE4298HT , MEE4298K-G , MEE4298T , MEE6240T , MEE7292-G .

History: FDB0300N1007L | 2SJ374 | ME8205E-G

 

 

 

 

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