All MOSFET. MEE4294P2-G Datasheet

 

MEE4294P2-G Datasheet and Replacement


   Type Designator: MEE4294P2-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 49.2 nC
   tr ⓘ - Rise Time: 69.5 nS
   Cossⓘ - Output Capacitance: 868 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO251
 

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MEE4294P2-G Datasheet (PDF)

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MEE4294P2-G

MEE4294P2-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294P2-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS

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MEE4294P2-G

MEE4294P-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294P-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O

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MEE4294P2-G

MEE4294K/MEE4294K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294K-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely

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MEE4294P2-G

MEE4294K2/MEE4294K2-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294K2-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extreme

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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Keywords - MEE4294P2-G MOSFET datasheet

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