FDMS7656AS Todos los transistores

 

FDMS7656AS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS7656AS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm

Encapsulados: POWER56

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FDMS7656AS datasheet

 ..1. Size:305K  fairchild semi
fdms7656as.pdf pdf_icon

FDMS7656AS

September 2009 FDMS7656AS N-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 m Features General Description The FDMS7656AS has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 7 V, ID = 27 A package technologies have been combined to offer the lowest

 7.1. Size:474K  1
fdms7658as.pdf pdf_icon

FDMS7656AS

FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 176 A, 1.9 m General Description Features The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A package technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 A rDS(on) while ma

 7.2. Size:470K  fairchild semi
fdms7658as.pdf pdf_icon

FDMS7656AS

September 2009 FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 m Features General Description The FDMS7658AS has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 A package technologies have been combined to offer the lowest

 7.3. Size:285K  fairchild semi
fdms7650.pdf pdf_icon

FDMS7656AS

August 2009 FDMS7650 N-Channel PowerTrench MOSFET 30 V, 60 A, 0.99 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.99 m at VGS = 10 V, ID = 36 A improve the overall efficiency and to minimize switch node Max rDS(on) = 1.55 m at VGS = 4.5 V, ID = 32 A ringing of DC/DC converters using either synchronous or Advance

Otros transistores... FDMS7608S , STM8324 , FDMS7620S , STM8320 , FDMS7650 , STM8319 , FDMS7650DC , STM8309 , AOD4184A , STM8306 , FDMS7658AS , STM8300 , FDMS7660 , STM8020 , FDMS7660AS , STM6970 , FDMS7670 .

History: STD7NM60N

 

 

 


History: STD7NM60N

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