Справочник MOSFET. FDMS7656AS

 

FDMS7656AS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDMS7656AS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 96 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 49 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0018 Ohm
   Тип корпуса: POWER56
     - подбор MOSFET транзистора по параметрам

 

FDMS7656AS Datasheet (PDF)

 ..1. Size:305K  fairchild semi
fdms7656as.pdfpdf_icon

FDMS7656AS

September 2009FDMS7656ASN-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 mFeatures General DescriptionThe FDMS7656AS has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 7 V, ID = 27 Apackage technologies have been combined to offer the lowest

 7.1. Size:474K  1
fdms7658as.pdfpdf_icon

FDMS7656AS

FDMS7658ASN-Channel PowerTrench SyncFETTM30 V, 176 A, 1.9 mGeneral DescriptionFeaturesThe FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apackage technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 ArDS(on) while ma

 7.2. Size:470K  fairchild semi
fdms7658as.pdfpdf_icon

FDMS7656AS

September 2009FDMS7658ASN-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mFeatures General DescriptionThe FDMS7658AS has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 Apackage technologies have been combined to offer the lowest

 7.3. Size:285K  fairchild semi
fdms7650.pdfpdf_icon

FDMS7656AS

August 2009FDMS7650N-Channel PowerTrench MOSFET 30 V, 60 A, 0.99 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.99 m at VGS = 10 V, ID = 36 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 1.55 m at VGS = 4.5 V, ID = 32 Aringing of DC/DC converters using either synchronous or Advance

Другие MOSFET... FDMS7608S , STM8324 , FDMS7620S , STM8320 , FDMS7650 , STM8319 , FDMS7650DC , STM8309 , CEP83A3 , STM8306 , FDMS7658AS , STM8300 , FDMS7660 , STM8020 , FDMS7660AS , STM6970 , FDMS7670 .

History: VBA1210 | SE12N65 | ME3205F-G | AO3402 | IRF7210TR | KIA6N70H-220F | STF20NF20

 

 
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