MEE4298K-G Todos los transistores

 

MEE4298K-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MEE4298K-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 64 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 46.9 nS
   Cossⓘ - Capacitancia de salida: 1130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de MEE4298K-G MOSFET

   - Selección ⓘ de transistores por parámetros

 

MEE4298K-G Datasheet (PDF)

 ..1. Size:884K  matsuki electric
 mee4298k-g.pdf pdf_icon

MEE4298K-G

Preliminary-MEE4298K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298K-G is a N-Channel enhancement mode power field RDS(ON)8m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)11.5m@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON)

 7.1. Size:913K  matsuki electric
 mee4298-g.pdf pdf_icon

MEE4298K-G

Preliminary-MEE4298-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298-G is a N-Channel enhancement mode power field RDS(ON)8m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)11.5m@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON)t

 7.2. Size:975K  matsuki electric
 mee4298ht.pdf pdf_icon

MEE4298K-G

Preliminary-MEE4298HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298HT is a N-Channel enhancement mode power field effect RDS(ON)8m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-res

 7.3. Size:874K  matsuki electric
 mee4298t.pdf pdf_icon

MEE4298K-G

Preliminary-MEE4298T N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298T is a N-Channel enhancement mode power field effect RDS(ON)8m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)11.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low

MOSTRAR MÁS

Otros transistores... MEE4294K2 , MEE4294K2-G , MEE4294K-G , MEE4294P2-G , MEE4294P-G , MEE4294T2 , MEE4298-G , MEE4298HT , IRF9540N , MEE4298T , MEE6240T , MEE7292-G , MEE72962-G , MEE7296-G , MEE7298-G , MEE7630-G , MEE7636-G .

History: FDC6304P | SVSP60R090FJDHD4 | 2SK4034 | DMTH4004SCTB | TF2341 | AP1005BSQ | IRFP254A

 

 
Back to Top

 


 
.