All MOSFET. MEE4298K-G Datasheet

 

MEE4298K-G MOSFET. Datasheet pdf. Equivalent

Type Designator: MEE4298K-G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 69 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 64 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 66.8 nC

Rise Time (tr): 46.9 nS

Drain-Source Capacitance (Cd): 1130 pF

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO252

MEE4298K-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MEE4298K-G Datasheet (PDF)

 ..1. Size:884K  matsuki electric
 mee4298k-g.pdf

MEE4298K-G MEE4298K-G

Preliminary-MEE4298K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298K-G is a N-Channel enhancement mode power field RDS(ON)8m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)11.5m@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON)

 7.1. Size:975K  matsuki electric
 mee4298ht.pdf

MEE4298K-G MEE4298K-G

Preliminary-MEE4298HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298HT is a N-Channel enhancement mode power field effect RDS(ON)8m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-res

 7.2. Size:874K  matsuki electric
 mee4298t.pdf

MEE4298K-G MEE4298K-G

Preliminary-MEE4298T N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298T is a N-Channel enhancement mode power field effect RDS(ON)8m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)11.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low

 7.3. Size:913K  matsuki electric
 mee4298-g.pdf

MEE4298K-G MEE4298K-G

Preliminary-MEE4298-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298-G is a N-Channel enhancement mode power field RDS(ON)8m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)11.5m@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON)t

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , MMIS60R580P , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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