MEE72962-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MEE72962-G Datasheet (PDF)

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MEE72962-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE72962-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O

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MEE7296-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7296-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

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Preliminary-MEE7298-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7298-G is a N-Channel enhancement mode power field RDS(ON)=5.85m(typ.)@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)=7.95m(typ.)@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low

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MEE7292-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7292-G is a N-Channel enhancement mode power field effect RDS(ON)11m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)on

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