NCE1579C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE1579C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 310 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 79 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 38 nS
Cossⓘ - Capacitancia de salida: 463 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de NCE1579C MOSFET
- Selecciónⓘ de transistores por parámetros
NCE1579C datasheet
..1. Size:370K 1
nce1579c.pdf 
Pb Free Product http //www.ncepower.com NCE1579C NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1579C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)
..2. Size:333K ncepower
nce1579c.pdf
http //www.ncepower.com NCE1579C NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1579C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)
8.1. Size:360K ncepower
nce1570.pdf
Pb Free Product http //www.ncepower.com NCE1570 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1570 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =70A Schematic diagram RDS(ON)
9.2. Size:397K ncepower
nce1540ka.pdf
http //www.ncepower.com NCE1540KA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
9.3. Size:365K ncepower
nce1503s.pdf
http //www.ncepower.com NCE1503S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1503S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 150V,ID = 3A RDS(ON)
9.4. Size:532K ncepower
nce15p25j.pdf
http //www.ncepower.com NCE15P25J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25J uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS D RDS(ON)
9.5. Size:1123K ncepower
nce15td60bt.pdf
Pb Free Product NCE15TD60BT 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
9.6. Size:695K ncepower
nce15h10.pdf
http //www.ncepower.com NCE15H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H10 uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. General Features Schematic diagram V =150V,I =100A DS D R
9.7. Size:713K ncepower
nce15h10a.pdf
Pb Free Product http //www.ncepower.com NCE15H10A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H10A uses advanced trench technology and design to provide excellent R with low gate charge. This DS(ON) device is suitable for use in PWM, load switching and general purpose applications. General Features V =150V,I =100A Schematic diagram DS D R
9.8. Size:1123K ncepower
nce15td65bt.pdf
Pb Free Product NCE15TD65BT 650V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
9.9. Size:381K ncepower
nce15td135lp.pdf
PbFreeProduct NCE15TD135LP 1350V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
9.10. Size:338K ncepower
nce1520.pdf
Pb Free Product http //www.ncepower.com NCE1520 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)
9.11. Size:396K ncepower
nce1520k.pdf
Pb Free Product http //www.ncepower.com NCE1520K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)
9.12. Size:452K ncepower
nce15h15t.pdf
Pb Free Product http //www.ncepower.com NCE15H15T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =150V,ID =150A Schematic diagram RDS(ON)
9.13. Size:554K ncepower
nce1540af.pdf
http //www.ncepower.com NCE1540AF NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540AF uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =150V,I =20A DS D R
9.14. Size:1123K ncepower
nce15td60bp.pdf
Pb Free Product NCE15TD60BP 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
9.15. Size:366K ncepower
nce1505s.pdf
Pb Free Product http //www.ncepower.com NCE1505S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A Schematic diagram RDS(ON)
9.16. Size:382K ncepower
nce15td120lp.pdf
PbFreeProduct NCE15TD120LP 1200V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
9.17. Size:1117K ncepower
nce15td65bf.pdf
Pb Free Product NCE15TD65BF 650V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
9.18. Size:315K ncepower
nce1540ad.pdf
Pb Free Product http //www.ncepower.com NCE1540AD NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
9.19. Size:1123K ncepower
nce15td65bp.pdf
Pb Free Product NCE15TD65BP 650V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
9.20. Size:1130K ncepower
nce15td60bd.pdf
Pb Free Product NCE15TD60BD 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
9.21. Size:331K ncepower
nce1507ak.pdf
http //www.ncepower.com NCE1507AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1507AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 7A Schematic diagram RDS(ON)
9.23. Size:770K ncepower
nce15p30.pdf
http //www.ncepower.com NCE15P30 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P30 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. General Features V =-150V,I =-30A Schematic diagram DS D R
9.24. Size:362K ncepower
nce1550f.pdf
Pb Free Product http //www.ncepower.com NCE1550F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1550F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)
9.25. Size:355K ncepower
nce15td135lt.pdf
PbFreeProduct NCE15TD135LT 1350V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
9.27. Size:527K ncepower
nce15p25i.pdf
http //www.ncepower.com NCE15P25I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS D Schematic diagram RDS(ON)
9.28. Size:538K ncepower
nce15td60b.pdf
PbFreeProduct NCE15TD60B 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switch
9.29. Size:301K ncepower
nce1502r.pdf
Pb Free Product http //www.ncepower.com NCE1502R NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)
9.30. Size:370K ncepower
nce1550.pdf
Pb Free Product http //www.ncepower.com NCE1550 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)
9.31. Size:517K ncepower
nce15p25jk.pdf
NCE15P25JK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JK uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS D RDS(ON)
9.32. Size:357K ncepower
nce1504r.pdf
http //www.ncepower.com NCE1504R NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1504R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 4A Schematic diagram RDS(ON)
9.33. Size:1328K ncepower
nce15td60bf.pdf
Pb Free Product NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
9.34. Size:1323K ncepower
nce15td120bd.pdf
Pb Free Product NCE15TD120BD 1200V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
9.35. Size:480K ncepower
nce15p25ji.pdf
http //www.ncepower.com NCE15P25JI NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS D Schematic diagram RDS(ON)
9.36. Size:302K ncepower
nce1512ia.pdf
Pb Free Product http //www.ncepower.com NCE1512IA NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE1512IA uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 150V,ID =12A RDS(ON)
9.37. Size:432K ncepower
nce15p25.pdf
http //www.ncepower.com NCE15P25 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS D RDS(ON)
9.38. Size:544K ncepower
nce15t60bd.pdf
PbFreeProduct NCE15T60BD 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed sw
9.39. Size:356K ncepower
nce15td120bt.pdf
PbFreeProduct NCE15TD120BT 1200V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
9.40. Size:796K ncepower
nce15p30k.pdf
http //www.ncepower.com NCE15P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P30K uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-30A Schematic diagram DS D R
9.41. Size:430K ncepower
nce1540k.pdf
Pb Free Product http //www.ncepower.com NCE1540K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
9.42. Size:356K ncepower
nce15td120lt.pdf
PbFreeProduct NCE15TD120LT 1200V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
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History: RUF025N02
| SUD23N06-31
