All MOSFET. NCE1579C Datasheet

 

NCE1579C MOSFET. Datasheet pdf. Equivalent

Type Designator: NCE1579C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 310 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 79 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 160 nC

Rise Time (tr): 38 nS

Drain-Source Capacitance (Cd): 463 pF

Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

Package: TO220

NCE1579C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE1579C Datasheet (PDF)

 ..1. Size:370K  1
 nce1579c.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1579CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1579C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)

 8.1. Size:360K  ncepower
 nce1570.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1570NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1570 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =70A Schematic diagram RDS(ON)

 9.1. Size:757K  1
 nce15td60bd nce15td60b nce15td60bf.pdf

NCE1579C NCE1579C

PbFreeProduct NCE15TD60BD,NCE15TD60B,NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 9.2. Size:430K  ncepower
 nce1540k.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1540KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 9.3. Size:356K  ncepower
 nce15td120bt.pdf

NCE1579C NCE1579C

PbFreeProduct NCE15TD120BT 1200V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp

 9.4. Size:452K  ncepower
 nce15h15t.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE15H15TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =150V,ID =150A Schematic diagram RDS(ON)

 9.5. Size:757K  ncepower
 nce15td60bd nce15td60b nce15td60bf.pdf

NCE1579C NCE1579C

PbFreeProduct NCE15TD60BD,NCE15TD60B,NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 9.6. Size:538K  ncepower
 nce15td60b.pdf

NCE1579C NCE1579C

PbFreeProduct NCE15TD60B 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switch

 9.7. Size:365K  ncepower
 nce1503s.pdf

NCE1579C NCE1579C

http://www.ncepower.com NCE1503SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1503S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 150V,ID = 3A RDS(ON)

 9.8. Size:301K  ncepower
 nce1502r.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1502RNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)

 9.9. Size:370K  ncepower
 nce1550.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1550NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , MMIS60R580P , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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