All MOSFET. NCE1579C Datasheet

 

NCE1579C MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE1579C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 79 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 463 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO220

 NCE1579C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE1579C Datasheet (PDF)

 ..1. Size:370K  1
nce1579c.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1579CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1579C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)

 ..2. Size:333K  ncepower
nce1579c.pdf

NCE1579C NCE1579C

http://www.ncepower.com NCE1579CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1579C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)

 8.1. Size:360K  ncepower
nce1570.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1570NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1570 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =70A Schematic diagram RDS(ON)

 9.1. Size:757K  1
nce15td60bd nce15td60b nce15td60bf.pdf

NCE1579C NCE1579C

PbFreeProduct NCE15TD60BD,NCE15TD60B,NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 9.2. Size:397K  ncepower
nce1540ka.pdf

NCE1579C NCE1579C

http://www.ncepower.com NCE1540KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 9.3. Size:365K  ncepower
nce1503s.pdf

NCE1579C NCE1579C

http://www.ncepower.com NCE1503SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1503S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 150V,ID = 3A RDS(ON)

 9.4. Size:532K  ncepower
nce15p25j.pdf

NCE1579C NCE1579C

http://www.ncepower.com NCE15P25J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25J uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)

 9.5. Size:695K  ncepower
nce15h10.pdf

NCE1579C NCE1579C

http://www.ncepower.comNCE15H10NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15H10 uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.General FeaturesSchematic diagram V =150V,I =100ADS DR

 9.6. Size:713K  ncepower
nce15h10a.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.comNCE15H10ANCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15H10A uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.General Features V =150V,I =100A Schematic diagramDS DR

 9.7. Size:338K  ncepower
nce1520.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1520NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

 9.8. Size:396K  ncepower
nce1520k.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1520KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

 9.9. Size:452K  ncepower
nce15h15t.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE15H15TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =150V,ID =150A Schematic diagram RDS(ON)

 9.10. Size:554K  ncepower
nce1540af.pdf

NCE1579C NCE1579C

http://www.ncepower.comNCE1540AFNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE1540AF uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =150V,I =20ADS DR

 9.11. Size:366K  ncepower
nce1505s.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1505SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A Schematic diagram RDS(ON)

 9.12. Size:315K  ncepower
nce1540ad.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1540ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 9.13. Size:331K  ncepower
nce1507ak.pdf

NCE1579C NCE1579C

http://www.ncepower.com NCE1507AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1507AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 7A Schematic diagram RDS(ON)

 9.14. Size:757K  ncepower
nce15td60bd nce15td60b nce15td60bf.pdf

NCE1579C NCE1579C

PbFreeProduct NCE15TD60BD,NCE15TD60B,NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 9.15. Size:770K  ncepower
nce15p30.pdf

NCE1579C NCE1579C

http://www.ncepower.comNCE15P30NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15P30 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications.General Features V =-150V,I =-30A Schematic diagramDS DR

 9.16. Size:362K  ncepower
nce1550f.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1550FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1550F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)

 9.17. Size:406K  ncepower
nce1520ka.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1520KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

 9.18. Size:527K  ncepower
nce15p25i.pdf

NCE1579C NCE1579C

http://www.ncepower.com NCE15P25I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS DSchematic diagram RDS(ON)

 9.19. Size:538K  ncepower
nce15td60b.pdf

NCE1579C NCE1579C

PbFreeProduct NCE15TD60B 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switch

 9.20. Size:301K  ncepower
nce1502r.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1502RNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)

 9.21. Size:370K  ncepower
nce1550.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1550NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)

 9.22. Size:517K  ncepower
nce15p25jk.pdf

NCE1579C NCE1579C

NCE15P25JK http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JK uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)

 9.23. Size:357K  ncepower
nce1504r.pdf

NCE1579C NCE1579C

http://www.ncepower.com NCE1504RNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1504R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 4A Schematic diagram RDS(ON)

 9.24. Size:480K  ncepower
nce15p25ji.pdf

NCE1579C NCE1579C

http://www.ncepower.com NCE15P25JI NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS DSchematic diagram RDS(ON)

 9.25. Size:302K  ncepower
nce1512ia.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1512IANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE1512IA uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 150V,ID =12A RDS(ON)

 9.26. Size:432K  ncepower
nce15p25.pdf

NCE1579C NCE1579C

http://www.ncepower.com NCE15P25 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)

 9.27. Size:356K  ncepower
nce15td120bt.pdf

NCE1579C NCE1579C

PbFreeProduct NCE15TD120BT 1200V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp

 9.28. Size:796K  ncepower
nce15p30k.pdf

NCE1579C NCE1579C

http://www.ncepower.comNCE15P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =-150V,I =-30A Schematic diagramDS DR

 9.29. Size:430K  ncepower
nce1540k.pdf

NCE1579C NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1540KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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