All MOSFET. NCE1579C Datasheet

 

NCE1579C Datasheet and Replacement


   Type Designator: NCE1579C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 79 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 160 nC
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 463 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO220
 

 NCE1579C substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE1579C Datasheet (PDF)

 ..1. Size:370K  1
nce1579c.pdf pdf_icon

NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1579CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1579C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)

 ..2. Size:333K  ncepower
nce1579c.pdf pdf_icon

NCE1579C

http://www.ncepower.com NCE1579CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1579C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)

 8.1. Size:360K  ncepower
nce1570.pdf pdf_icon

NCE1579C

Pb Free Producthttp://www.ncepower.com NCE1570NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1570 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =70A Schematic diagram RDS(ON)

 9.1. Size:757K  1
nce15td60bd nce15td60b nce15td60bf.pdf pdf_icon

NCE1579C

PbFreeProduct NCE15TD60BD,NCE15TD60B,NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SRT20N090HTC

Keywords - NCE1579C MOSFET datasheet

 NCE1579C cross reference
 NCE1579C equivalent finder
 NCE1579C lookup
 NCE1579C substitution
 NCE1579C replacement

 

 
Back to Top

 


 
.