HCD60R260 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HCD60R260
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 118 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 14.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 31 nC
Tiempo de subida (tr): 21 nS
Conductancia de drenaje-sustrato (Cd): 31 pF
Resistencia entre drenaje y fuente RDS(on): 0.26 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET HCD60R260
HCD60R260 Datasheet (PDF)
hcd60r260.pdf
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