HCD60R260 PDF and Equivalents Search

 

HCD60R260 Specs and Replacement

Type Designator: HCD60R260

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 118 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 31 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: DPAK

HCD60R260 substitution

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HCD60R260 datasheet

 ..1. Size:418K  semihow
 hcd60r260.pdf pdf_icon

HCD60R260

Sep 2020 HCD60R260 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 14.4 A Excellent stability and uniformity RDS(on), max 0.26 100% Avalanche Tested Built-in ESD Diode Qg, Typ 31 nC Application Package & Internal Circuit D-PAK SYMBOL Switc... See More ⇒

 8.1. Size:368K  semihow
 hcd60r900.pdf pdf_icon

HCD60R260

June 2019 HCD60R900 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 5.0 A Excellent stability and uniformity RDS(on), max 0.9 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.3 nC Application Package & Internal Circuit D-PAK SYMBOL Switc... See More ⇒

 8.2. Size:436K  semihow
 hcd60r750.pdf pdf_icon

HCD60R260

July 2020 HCD60R750 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 5.8 A Excellent stability and uniformity RDS(on), max 0.75 100% Avalanche Tested Built-in ESD Diode Qg, Typ 11.2 nC Application Package & Internal Circuit D-PAK SYMBOL Swi... See More ⇒

 8.3. Size:437K  semihow
 hcd60r490.pdf pdf_icon

HCD60R260

April 2020 HCD60R490 60V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 8 A Excellent stability and uniformity RDS(on), max 0.49 100% Avalanche Tested Built-in ESD Diode Qg, Typ 16 nC Application Package & Internal Circuit D-PAK SYMBOL Switch ... See More ⇒

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Detailed specifications: MS5N100FD, SJMN600R70F, HCA60R290, HCA65R165, HCA70R180, HCA90R300, HCA90R450, HCA90R800, 18N50, HCD60R490, HCD60R750, HCD60R900, HCD65R2K2, HCD65R2K7, HCD65R450, HCD65R830, HCD70R910

Keywords - HCD60R260 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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