HCD60R900 Todos los transistores

 

HCD60R900 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HCD60R900
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: DPAK
     - Selección de transistores por parámetros

 

HCD60R900 Datasheet (PDF)

 ..1. Size:368K  semihow
 hcd60r900.pdf pdf_icon

HCD60R900

June 2019HCD60R900600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 5.0 A Excellent stability and uniformityRDS(on), max 0.9 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.3 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switc

 8.1. Size:436K  semihow
 hcd60r750.pdf pdf_icon

HCD60R900

July 2020HCD60R750600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 5.8 A Excellent stability and uniformityRDS(on), max 0.75 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Swi

 8.2. Size:437K  semihow
 hcd60r490.pdf pdf_icon

HCD60R900

April 2020HCD60R49060V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 8 A Excellent stability and uniformityRDS(on), max 0.49 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch

 8.3. Size:418K  semihow
 hcd60r260.pdf pdf_icon

HCD60R900

Sep 2020HCD60R260600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switc

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: TPC65R600C | AOLF66610 | CSD17310Q5A | 2SK1336 | WSD4066DN | VS3618AE | IRFH5007

 

 
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