HCD60R900 MOSFET. Datasheet pdf. Equivalent
Type Designator: HCD60R900
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 13 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: DPAK
HCD60R900 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HCD60R900 Datasheet (PDF)
hcd60r900.pdf
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hcd60r750.pdf
July 2020HCD60R750600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 5.8 A Excellent stability and uniformityRDS(on), max 0.75 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Swi
hcd60r490.pdf
April 2020HCD60R49060V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 8 A Excellent stability and uniformityRDS(on), max 0.49 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch
hcd60r260.pdf
Sep 2020HCD60R260600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switc
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
