HCD65R2K2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HCD65R2K2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 7.5 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
Paquete / Cubierta: DPAK
HCD65R2K2 Datasheet (PDF)
hcd65r2k2.pdf

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Otros transistores... HCA70R180 , HCA90R300 , HCA90R450 , HCA90R800 , HCD60R260 , HCD60R490 , HCD60R750 , HCD60R900 , IRF2807 , HCD65R2K7 , HCD65R450 , HCD65R830 , HCD70R910 , HCD80R1K2 , HCD80R1K4 , HCD90R1K0 , HCD90R1K6 .
History: AONV110A60
History: AONV110A60



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