HCD65R2K2 Todos los transistores

 

HCD65R2K2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HCD65R2K2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 6.2 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 7.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
   Paquete / Cubierta: DPAK

 Búsqueda de reemplazo de MOSFET HCD65R2K2

 

HCD65R2K2 Datasheet (PDF)

 ..1. Size:425K  semihow
hcd65r2k2.pdf

HCD65R2K2
HCD65R2K2

June 2020HCD65R2K2650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 2.5 A Excellent stability and uniformityRDS(on), max 2.2 100% Avalanche TestedQg, Typ 6.2 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch Mode Power Supply (SMP

 6.1. Size:413K  semihow
hcd65r2k7.pdf

HCD65R2K2
HCD65R2K2

April 2020HCD65R2K7650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 2.2 A Excellent stability and uniformityRDS(on), max 2.7 100% Avalanche TestedQg, Typ 4.1 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch Mode Power Supply (SM

 8.1. Size:437K  semihow
hcd65r450.pdf

HCD65R2K2
HCD65R2K2

Sep 2020HCD65R450650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 9.2 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 20 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch

 8.2. Size:436K  semihow
hcd65r830.pdf

HCD65R2K2
HCD65R2K2

July 2020HCD65R830650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 5.5 A Excellent stability and uniformityRDS(on), max 0.83 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Swi

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