FDMS7660 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS7660
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 78 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 42 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 60 nC
Resistencia entre drenaje y fuente RDS(on): 0.0028 Ohm
Paquete / Cubierta: POWER56
Búsqueda de reemplazo de MOSFET FDMS7660
FDMS7660 Datasheet (PDF)
fdms7660.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
April 2009FDMS7660N-Channel PowerTrench MOSFET 30 V, 2.8 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 2.8 m at VGS = 10 V, ID = 25 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 19 Aringing of DC/DC converters using either synchronous or conventional switc
fdms7660.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7660as.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
September 2009FDMS7660ASN-Channel PowerTrench SyncFETTM 30 V, 42 A, 2.4 mFeatures General DescriptionThe FDMS7660AS has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.6 m at VGS = 7 V, ID = 23 Apackage technologies have been combined to offer the lowest
fdms7670as.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7692a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7672.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7692.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7658as.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FDMS7658ASN-Channel PowerTrench SyncFETTM30 V, 176 A, 1.9 mGeneral DescriptionFeaturesThe FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apackage technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 ArDS(on) while ma
fdms7672as.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
September 2009FDMS7672ASN-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 mFeatures General DescriptionThe FDMS7672AS has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 4.5 m at VGS = 7 V, ID = 16 Apackage technologies have been combined to offer the lowest
fdms7680.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
October 2014FDMS7680N-Channel PowerTrench MOSFET 30 V, 6.9 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 6.9 m at VGS = 10 V, ID = 14 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 Aringing of DC/DC converters using either synchronous or Advanced Package
fdms7608s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
June 2011FDMS7608SDual N-Channel PowerTrench MOSFET Q1: 30 V, 22 A, 10.0 m Q2: 30 V, 30 A, 6.3 m Features General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 10.0 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synchronous Max rDS(
fdms7682.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
July 2010FDMS7682N-Channel PowerTrench MOSFET 30 V, 6.3 mFeatures General Description Max rDS(on) = 6.3 m at VGS = 10 V, ID = 14 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 10.4 m at VGS = 4.5 V, ID = 11 Aringing of DC/DC converters using either synchronous or Advanced Package and
fdms7678.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
January 2015FDMS7678N-Channel Power Trench MOSFET30 V, 26 A, 5.5 mFeatures General Description Max rDS(on) = 5.5 m at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 6.8 m at VGS = 4.5 V, ID = 15 Abeen especially tailored to minimize the on-state resistance. This High p
fdms7670as.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
March 2010FDMS7670ASN-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 mFeatures General DescriptionThe FDMS7670AS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.2 m at VGS = 7 V, ID = 19 Apackage technologies have been combined to offer the lowest Adv
fdms7600as.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
December 2009FDMS7600ASDual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 m N-Channel: 30 V, 40 A, 2.8 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synch
fdms7620s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
March 2011FDMS7620SDual N-Channel PowerTrench MOSFET Q1: 30 V, 10.1 A, 20.0 m Q2: 30 V, 12.4 A, 11.2 mFeaturesQ1: N-ChannelGeneral Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 10.1 AThis device includes two specialized MOSFETs in a unique dual Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 7.5 APower 56 package. It is designed to provide an optimal synchro-no
fdms7692a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
June 2009FDMS7692AN-Channel PowerTrench MOSFET 30 V, 8 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 14 m at VGS = 4.5 V, ID = 10 Aringing of DC/DC converters using either synchronous or Advanced Package and S
fdms7676.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
July 2009FDMS7676N-Channel PowerTrench MOSFET 30 V, 5.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.5 m at VGS = 10 V, ID = 19 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 7.6 m at VGS = 4.5 V, ID = 15 Aringing of DC/DC converters using either synchronous or conventional switch
fdms7672.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
April 2009FDMS7672N-Channel PowerTrench MOSFET 30 V, 5.0 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 19 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 6.9 m at VGS = 4.5 V, ID = 15 Aringing of DC/DC converters using either synchronous or conventional switc
fdms7670.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
April 2009FDMS7670N-Channel PowerTrench MOSFET 30 V, 3.8 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 21 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 5.0 m at VGS = 4.5 V, ID = 17 Aringing of DC/DC converters using either synchronous or conventional switc
fdms7606.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
May 2011FDMS7606Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 m Q2: 30 V, 22 A, 11.6 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 11.4 m at VGS = 10 V, ID = 11.5 Aconnected to enable easy placement and routing of synchronous Max rDS(
fdms7692.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
June 2009FDMS7692N-Channel PowerTrench MOSFET 30 V, 7.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 13 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 13 m at VGS = 4.5 V, ID = 10 Aringing of DC/DC converters using either synchronous or Advanced Package an
fdms7656as.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
September 2009FDMS7656ASN-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 mFeatures General DescriptionThe FDMS7656AS has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 7 V, ID = 27 Apackage technologies have been combined to offer the lowest
fdms7602s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
August 2010FDMS7602SDual N-Channel PowerTrench MOSFET Q1: 30 V, 30 A, 7.5 m Q2: 30 V, 30 A, 5.0 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synchronous Max rDS(on
fdms7698.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
May 2011FDMS7698N-Channel PowerTrench MOSFET 30 V, 22 A, 10 mFeatures General Description Max rDS(on) = 10 m at VGS = 10 V, ID = 13.5 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 15 m at VGS = 4.5 V, ID = 11.0 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Package
fdms7694.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
July 2011FDMS7694N-Channel PowerTrench MOSFET 30 V, 9.5 mFeatures General Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.5 Aringing of DC/DC converters using either synchronous or Advanced Package
fdms7658as.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
September 2009FDMS7658ASN-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mFeatures General DescriptionThe FDMS7658AS has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 Apackage technologies have been combined to offer the lowest
fdms7650.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
August 2009FDMS7650N-Channel PowerTrench MOSFET 30 V, 60 A, 0.99 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.99 m at VGS = 10 V, ID = 36 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 1.55 m at VGS = 4.5 V, ID = 32 Aringing of DC/DC converters using either synchronous or Advance
fdms7672as.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7682.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7620s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FDMS7620SDual N-Channel PowerTrench MOSFETQ1: 30 V, 13 A, 20.0 m Q2: 30 V, 22 A, 11.2 mFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized MOSFETs in a unique dual Max rDS(on) = 20.0 m at VGS = 10 V, ID = 10.1 APower 56 package. It is designed to provide an optimal synchro- Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 7.5 Anous buck power sta
fdms7698.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7694.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FDMS7694N-Channel PowerTrench MOSFETGeneral Description30 V, 9.5 mThis N-Channel MOSFET has been designed specifically to Features improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 Aconventional switching PWM controllers.It has been optimized Max rDS(on) = 14.5
fdms7658as.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FDMS7658ASN-Channel PowerTrench SyncFETTM30 V, 176 A, 1.9 mGeneral DescriptionFeaturesThe FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apackage technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 ArDS(on) while ma
fdms7650.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .