FDMS7660 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMS7660
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 42 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 60 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: POWER56
FDMS7660 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMS7660 Datasheet (PDF)
fdms7660.pdf
April 2009FDMS7660N-Channel PowerTrench MOSFET 30 V, 2.8 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 2.8 m at VGS = 10 V, ID = 25 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 19 Aringing of DC/DC converters using either synchronous or conventional switc
fdms7660.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7660as.pdf
September 2009FDMS7660ASN-Channel PowerTrench SyncFETTM 30 V, 42 A, 2.4 mFeatures General DescriptionThe FDMS7660AS has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.6 m at VGS = 7 V, ID = 23 Apackage technologies have been combined to offer the lowest
fdms7670as.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7692a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7672.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7692.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7658as.pdf
FDMS7658ASN-Channel PowerTrench SyncFETTM30 V, 176 A, 1.9 mGeneral DescriptionFeaturesThe FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apackage technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 ArDS(on) while ma
fdms7672as.pdf
September 2009FDMS7672ASN-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 mFeatures General DescriptionThe FDMS7672AS has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 4.5 m at VGS = 7 V, ID = 16 Apackage technologies have been combined to offer the lowest
fdms7680.pdf
October 2014FDMS7680N-Channel PowerTrench MOSFET 30 V, 6.9 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 6.9 m at VGS = 10 V, ID = 14 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 Aringing of DC/DC converters using either synchronous or Advanced Package
fdms7608s.pdf
June 2011FDMS7608SDual N-Channel PowerTrench MOSFET Q1: 30 V, 22 A, 10.0 m Q2: 30 V, 30 A, 6.3 m Features General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 10.0 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synchronous Max rDS(
fdms7682.pdf
July 2010FDMS7682N-Channel PowerTrench MOSFET 30 V, 6.3 mFeatures General Description Max rDS(on) = 6.3 m at VGS = 10 V, ID = 14 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 10.4 m at VGS = 4.5 V, ID = 11 Aringing of DC/DC converters using either synchronous or Advanced Package and
fdms7678.pdf
January 2015FDMS7678N-Channel Power Trench MOSFET30 V, 26 A, 5.5 mFeatures General Description Max rDS(on) = 5.5 m at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 6.8 m at VGS = 4.5 V, ID = 15 Abeen especially tailored to minimize the on-state resistance. This High p
fdms7670as.pdf
March 2010FDMS7670ASN-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 mFeatures General DescriptionThe FDMS7670AS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.2 m at VGS = 7 V, ID = 19 Apackage technologies have been combined to offer the lowest Adv
fdms7600as.pdf
December 2009FDMS7600ASDual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 m N-Channel: 30 V, 40 A, 2.8 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synch
fdms7620s.pdf
March 2011FDMS7620SDual N-Channel PowerTrench MOSFET Q1: 30 V, 10.1 A, 20.0 m Q2: 30 V, 12.4 A, 11.2 mFeaturesQ1: N-ChannelGeneral Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 10.1 AThis device includes two specialized MOSFETs in a unique dual Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 7.5 APower 56 package. It is designed to provide an optimal synchro-no
fdms7692a.pdf
June 2009FDMS7692AN-Channel PowerTrench MOSFET 30 V, 8 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 14 m at VGS = 4.5 V, ID = 10 Aringing of DC/DC converters using either synchronous or Advanced Package and S
fdms7676.pdf
July 2009FDMS7676N-Channel PowerTrench MOSFET 30 V, 5.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.5 m at VGS = 10 V, ID = 19 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 7.6 m at VGS = 4.5 V, ID = 15 Aringing of DC/DC converters using either synchronous or conventional switch
fdms7672.pdf
April 2009FDMS7672N-Channel PowerTrench MOSFET 30 V, 5.0 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 19 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 6.9 m at VGS = 4.5 V, ID = 15 Aringing of DC/DC converters using either synchronous or conventional switc
fdms7670.pdf
April 2009FDMS7670N-Channel PowerTrench MOSFET 30 V, 3.8 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 21 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 5.0 m at VGS = 4.5 V, ID = 17 Aringing of DC/DC converters using either synchronous or conventional switc
fdms7606.pdf
May 2011FDMS7606Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 m Q2: 30 V, 22 A, 11.6 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 11.4 m at VGS = 10 V, ID = 11.5 Aconnected to enable easy placement and routing of synchronous Max rDS(
fdms7692.pdf
June 2009FDMS7692N-Channel PowerTrench MOSFET 30 V, 7.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 13 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 13 m at VGS = 4.5 V, ID = 10 Aringing of DC/DC converters using either synchronous or Advanced Package an
fdms7656as.pdf
September 2009FDMS7656ASN-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 mFeatures General DescriptionThe FDMS7656AS has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 7 V, ID = 27 Apackage technologies have been combined to offer the lowest
fdms7602s.pdf
August 2010FDMS7602SDual N-Channel PowerTrench MOSFET Q1: 30 V, 30 A, 7.5 m Q2: 30 V, 30 A, 5.0 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synchronous Max rDS(on
fdms7698.pdf
May 2011FDMS7698N-Channel PowerTrench MOSFET 30 V, 22 A, 10 mFeatures General Description Max rDS(on) = 10 m at VGS = 10 V, ID = 13.5 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 15 m at VGS = 4.5 V, ID = 11.0 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Package
fdms7694.pdf
July 2011FDMS7694N-Channel PowerTrench MOSFET 30 V, 9.5 mFeatures General Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.5 Aringing of DC/DC converters using either synchronous or Advanced Package
fdms7658as.pdf
September 2009FDMS7658ASN-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mFeatures General DescriptionThe FDMS7658AS has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 Apackage technologies have been combined to offer the lowest
fdms7650.pdf
August 2009FDMS7650N-Channel PowerTrench MOSFET 30 V, 60 A, 0.99 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.99 m at VGS = 10 V, ID = 36 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 1.55 m at VGS = 4.5 V, ID = 32 Aringing of DC/DC converters using either synchronous or Advance
fdms7672as.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7682.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7620s.pdf
FDMS7620SDual N-Channel PowerTrench MOSFETQ1: 30 V, 13 A, 20.0 m Q2: 30 V, 22 A, 11.2 mFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized MOSFETs in a unique dual Max rDS(on) = 20.0 m at VGS = 10 V, ID = 10.1 APower 56 package. It is designed to provide an optimal synchro- Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 7.5 Anous buck power sta
fdms7698.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7694.pdf
FDMS7694N-Channel PowerTrench MOSFETGeneral Description30 V, 9.5 mThis N-Channel MOSFET has been designed specifically to Features improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 Aconventional switching PWM controllers.It has been optimized Max rDS(on) = 14.5
fdms7658as.pdf
FDMS7658ASN-Channel PowerTrench SyncFETTM30 V, 176 A, 1.9 mGeneral DescriptionFeaturesThe FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apackage technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 ArDS(on) while ma
fdms7650.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: FDMS7650 , STM8319 , FDMS7650DC , STM8309 , FDMS7656AS , STM8306 , FDMS7658AS , STM8300 , MDF11N65B , STM8020 , FDMS7660AS , STM6970 , FDMS7670 , STM6960 , FDMS7670AS , STM6930A , FDMS7672 .
