HCFL65R210 Todos los transistores

 

HCFL65R210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HCFL65R210
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 149 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 39 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
   Paquete / Cubierta: DFN8X8
 

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HCFL65R210 Datasheet (PDF)

 ..1. Size:433K  semihow
 hcfl65r210.pdf pdf_icon

HCFL65R210

May 2020HCFL65R210650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 17.1 A Excellent stability and uniformityRDS(on), max 0.23 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

 7.1. Size:434K  semihow
 hcfl65r130.pdf pdf_icon

HCFL65R210

May 2020HCFL65R130650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 25.3 A Excellent stability and uniformityRDS(on), max 143 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 65 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

 7.2. Size:432K  semihow
 hcfl65r550.pdf pdf_icon

HCFL65R210

July 2020HCFL65R550650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 7.7 A Excellent stability and uniformityRDS(on), max 0.6 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swit

 7.3. Size:433K  semihow
 hcfl65r380.pdf pdf_icon

HCFL65R210

May 2020HCFL65R380650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 10.6 A Excellent stability and uniformityRDS(on), max 0.42 100% Avalanche Tested Built-in ESD DiodeQg, Typ 22.6 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL S

MOSTRAR MÁS

Otros transistores... HCF70R600 , HCF70R910 , HCFL60R115 , HCFL60R150 , HCFL60R190 , HCFL60R290 , HCFL60R350 , HCFL65R130 , HY1906P , HCFL65R380 , HCFL65R550 , HCFL70R180 , HCFL70R360 , HCFL80R250 , HCFL80R380 , HCI60R150 , HCI70R230 .

History: FDU5N50NZTU | JS65R170BM | 2SK1757 | 60NM60G-T47 | FS3KM-10 | IPD25CN10N | AP10N10K

 

 
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