All MOSFET. HCFL65R210 Datasheet

 

HCFL65R210 Datasheet and Replacement


   Type Designator: HCFL65R210
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 149 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: DFN8X8
 

 HCFL65R210 substitution

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HCFL65R210 Datasheet (PDF)

 ..1. Size:433K  semihow
 hcfl65r210.pdf pdf_icon

HCFL65R210

May 2020HCFL65R210650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 17.1 A Excellent stability and uniformityRDS(on), max 0.23 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

 7.1. Size:434K  semihow
 hcfl65r130.pdf pdf_icon

HCFL65R210

May 2020HCFL65R130650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 25.3 A Excellent stability and uniformityRDS(on), max 143 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 65 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

 7.2. Size:432K  semihow
 hcfl65r550.pdf pdf_icon

HCFL65R210

July 2020HCFL65R550650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 7.7 A Excellent stability and uniformityRDS(on), max 0.6 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swit

 7.3. Size:433K  semihow
 hcfl65r380.pdf pdf_icon

HCFL65R210

May 2020HCFL65R380650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 10.6 A Excellent stability and uniformityRDS(on), max 0.42 100% Avalanche Tested Built-in ESD DiodeQg, Typ 22.6 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL S

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Datasheet: HCF70R600 , HCF70R910 , HCFL60R115 , HCFL60R150 , HCFL60R190 , HCFL60R290 , HCFL60R350 , HCFL65R130 , HY1906P , HCFL65R380 , HCFL65R550 , HCFL70R180 , HCFL70R360 , HCFL80R250 , HCFL80R380 , HCI60R150 , HCI70R230 .

Keywords - HCFL65R210 MOSFET datasheet

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