All MOSFET. HCFL65R210 Datasheet

 

HCFL65R210 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HCFL65R210
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 149 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 17.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: DFN8X8

 HCFL65R210 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HCFL65R210 Datasheet (PDF)

 ..1. Size:433K  semihow
 hcfl65r210.pdf

HCFL65R210 HCFL65R210

May 2020HCFL65R210650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 17.1 A Excellent stability and uniformityRDS(on), max 0.23 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

 7.1. Size:434K  semihow
 hcfl65r130.pdf

HCFL65R210 HCFL65R210

May 2020HCFL65R130650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 25.3 A Excellent stability and uniformityRDS(on), max 143 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 65 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

 7.2. Size:432K  semihow
 hcfl65r550.pdf

HCFL65R210 HCFL65R210

July 2020HCFL65R550650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 7.7 A Excellent stability and uniformityRDS(on), max 0.6 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swit

 7.3. Size:433K  semihow
 hcfl65r380.pdf

HCFL65R210 HCFL65R210

May 2020HCFL65R380650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 10.6 A Excellent stability and uniformityRDS(on), max 0.42 100% Avalanche Tested Built-in ESD DiodeQg, Typ 22.6 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL S

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SJ473-01S | AP9561GP-HF | MSF9N90 | SL2300 | LSGG08R060W3 | MCB160N10Y | FC6B21100L

 

 
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