HCFL65R550 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HCFL65R550
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 19 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Encapsulados: DFN8X8
Búsqueda de reemplazo de HCFL65R550 MOSFET
- Selecciónⓘ de transistores por parámetros
HCFL65R550 datasheet
hcfl65r550.pdf
July 2020 HCFL65R550 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 7.7 A Excellent stability and uniformity RDS(on), max 0.6 100% Avalanche Tested Built-in ESD Diode Qg, Typ 16 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swit
hcfl65r130.pdf
May 2020 HCFL65R130 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 25.3 A Excellent stability and uniformity RDS(on), max 143 m 100% Avalanche Tested Built-in ESD Diode Qg, Typ 65 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi
hcfl65r210.pdf
May 2020 HCFL65R210 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 17.1 A Excellent stability and uniformity RDS(on), max 0.23 100% Avalanche Tested Built-in ESD Diode Qg, Typ 40 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi
hcfl65r380.pdf
May 2020 HCFL65R380 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 10.6 A Excellent stability and uniformity RDS(on), max 0.42 100% Avalanche Tested Built-in ESD Diode Qg, Typ 22.6 nC Application Package & Internal Circuit DFN8x8 SYMBOL S
Otros transistores... HCFL60R115 , HCFL60R150 , HCFL60R190 , HCFL60R290 , HCFL60R350 , HCFL65R130 , HCFL65R210 , HCFL65R380 , 60N06 , HCFL70R180 , HCFL70R360 , HCFL80R250 , HCFL80R380 , HCI60R150 , HCI70R230 , HCI70R360 , HCI70R600 .
History: AOWF14N50 | SW4N70B
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
irfz48 | bf494 transistor equivalent | 2sc458 pinout | bc183l | tip35 datasheet | tip36c datasheet | 2sc461 | hy1906