HCP65R110 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HCP65R110  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 205 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 29.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 69 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: TO220

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HCP65R110 datasheet

 ..1. Size:358K  semihow
hcp65r110.pdf pdf_icon

HCP65R110

Dec 2019 HCP65R110 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 29.1 A Excellent stability and uniformity RDS(on), max 110 m 100% Avalanche Tested Built-in ESD Diode Qg, Typ 75 nC Application Package & Internal Circuit TO-220 SYMBOL Swit

 7.1. Size:358K  semihow
hcp65r165.pdf pdf_icon

HCP65R110

Dec 2019 HCP65R165 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 20.4 A Excellent stability and uniformity RDS(on), max 0.165 100% Avalanche Tested Built-in ESD Diode Qg, Typ 50 nC Application Package & Internal Circuit TO-220 SYMBOL Swi

 7.2. Size:359K  semihow
hcp65r130.pdf pdf_icon

HCP65R110

Dec 2019 HCP65R130 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 25 A Excellent stability and uniformity RDS(on), max 130 m 100% Avalanche Tested Built-in ESD Diode Qg, Typ 65 nC Application Package & Internal Circuit TO-220 SYMBOL Switch

 8.1. Size:631K  semihow
hcp65r210.pdf pdf_icon

HCP65R110

Nov 2020 HCP65R210 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 16.8 A Excellent stability and uniformity RDS(on), max 0.21 100% Avalanche Tested Built-in ESD Diode Qg, Typ 40 nC Application Package & Internal Circuit TO-220 SYMBOL Swit

Otros transistores... HCFL70R360, HCFL80R250, HCFL80R380, HCI60R150, HCI70R230, HCI70R360, HCI70R600, HCP60R099, IRF540, HCP65R130, HCP65R165, HCP65R210, HCP65R320, HCP90R300, HCP90R450, HCP90R800, HCS60R099