STM6960 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STM6960
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.5 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 75 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de STM6960 MOSFET
- Selecciónⓘ de transistores por parámetros
STM6960 datasheet
stm6960.pdf
Green Product STM6960 a S mHop Microelectronics C orp. Ver 1.2 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 55 @ VGS=10V Suface Mount Package. 60V 5.5A 70 @ VGS=4.5V D2 5 4 G2 6 3 D2 S2 D1 7 2 G1 SO-8 8 1 D1 S1 1 (TA=25 C unless otherwise
stm6960a.pdf
Green r r P Pr Pr Prod STM6960A a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 71 @ VGS=10V Suface Mount Package. 60V 4A 92 @ VGS=4.5V 5 4 G 2 D2 6 3 D2 S 2 7 2 D1 G 1 SO-8 D1 8 1 S 1 1 (TA=25 C un
stm6967.pdf
Green Product STM6967 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 86 @ VGS=-10V Suface Mount Package. -60V -4A 125 @ VGS=-4.5V D 5 4 G 6 3 D S 7 2 D S S O-8 D 8 1 S 1 (TA=25 C unless otherwise noted) ABS
stm6968.pdf
S TM6968 S amHop Microelectronics C orp. Nov 12.2006 Dual N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 60 @ VGS = 10V 60V 5A Surface Mount Package. 70 @ VGS =4.5V ESD Protected. D1 D1 D2 D2 8 7 6 5 SO-8 1 1 2 3 4 S 1 G 1 S 2 G 2 ABS OLUTE
Otros transistores... STM8306 , FDMS7658AS , STM8300 , FDMS7660 , STM8020 , FDMS7660AS , STM6970 , FDMS7670 , IRF840 , FDMS7670AS , STM6930A , FDMS7672 , STM6928 , FDMS7672AS , STM6926 , FDMS7676 , STM6924 .
History: AOC2802
History: AOC2802
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