STM6960 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STM6960
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 5.5 A
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.8 V
Carga de la puerta (Qg): 9 nC
Conductancia de drenaje-sustrato (Cd): 75 pF
Resistencia entre drenaje y fuente RDS(on): 0.055 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET STM6960
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