STM6960
MOSFET. Datasheet pdf. Equivalent
Type Designator: STM6960
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8
V
|Id|ⓘ - Maximum Drain Current: 5.5
A
Qgⓘ - Total Gate Charge: 9
nC
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
SOP8
STM6960
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STM6960
Datasheet (PDF)
..1. Size:112K samhop
stm6960.pdf 
GreenProductSTM6960aS mHop Microelectronics C orp.Ver 1.2Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.55 @ VGS=10VSuface Mount Package.60V 5.5A70 @ VGS=4.5VD25 4G26 3D2 S2D1 7 2G1SO-88 1D1 S11(TA=25C unless otherwise
0.1. Size:100K samhop
stm6960a.pdf
GreenrrPPrPrProdSTM6960AaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.71 @ VGS=10VSuface Mount Package.60V 4A92 @ VGS=4.5V5 4 G 2D26 3D2 S 27 2D1 G 1SO-8D1 8 1S 11(TA=25C un
8.1. Size:169K samhop
stm6967.pdf
GreenProductSTM6967aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.86 @ VGS=-10VSuface Mount Package.-60V -4A125 @ VGS=-4.5VD 5 4 G6 3D S7 2D SS O-8D 8 1S1(TA=25C unless otherwise noted)ABS
8.2. Size:91K samhop
stm6968.pdf
S TM6968S amHop Microelectronics C orp.Nov 12.2006Dual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.60 @ VGS = 10V60V 5A Surface Mount Package.70 @ VGS =4.5VESD Protected.D1 D1 D2 D28 7 6 5SO-811 2 3 4S 1 G 1 S 2 G 2ABS OLUTE
8.3. Size:137K samhop
stm6962.pdf
GreenProductSTM6962SamHop Microelectronics Corp.Aug 29.2006Dual N-Channel Enhancement Mode Field Effect TransistorPRODUCT SUMMARY FEATURESSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) ( m ) MaxRugged and reliable.36 @ VGS = 10V60V 6.5ASurface Mount Package.42 @ VGS = 4.5VD1 D1 D2 D28 7 6 5SO-811 2 3 4S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS
8.4. Size:182K samhop
stm6966.pdf
GreenProductSTM6966aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.80 @ VGS=10VSuface Mount Package.60V 4.5A110 @ VGS=4.5VESD Protected.D 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless otherw
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