HCS80R1K4ST Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HCS80R1K4ST  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 11 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO220FT

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HCS80R1K4ST datasheet

 ..1. Size:399K  semihow
 hcs80r1k4st.pdf pdf_icon

HCS80R1K4ST

Sep 2020 HCS80R1K4ST 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.0 A Excellent stability and uniformity RDS(on), max 1.4 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.1 nC Application Package & Internal Circuit TO-220FT SYMBOL S

 4.1. Size:398K  semihow
 hcs80r1k4s.pdf pdf_icon

HCS80R1K4ST

Sep 2020 HCS80R1K4S 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.0 A Excellent stability and uniformity RDS(on), max 1.4 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.1 nC Application Package & Internal Circuit TO-220FS SYMBOL Sw

 6.1. Size:397K  semihow
 hcs80r1k2s.pdf pdf_icon

HCS80R1K4ST

Sep 2020 HCS80R1K2S 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.5 A Excellent stability and uniformity RDS(on), max 1.2 100% Avalanche Tested Built-in ESD Diode Qg, Typ 10.3 nC Application Package & Internal Circuit TO-220FS SYMBOL S

 6.2. Size:399K  semihow
 hcs80r1k2st.pdf pdf_icon

HCS80R1K4ST

Sep 2020 HCS80R1K2ST 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.5 A Excellent stability and uniformity RDS(on), max 1.2 100% Avalanche Tested Built-in ESD Diode Qg, Typ 10.3 nC Application Package & Internal Circuit TO-220FT SYMBOL

MOSTRAR MÁS

Otros transistores... HCS70R180S, HCS70R230S, HCS70R600ST, HCS70R710ST, HCS70R910ST, HCS80R1K2S, HCS80R1K2ST, HCS80R1K4S, IRF9540N, HCS90R1K0S, HCS90R1K6S, HCS90R300S, HCS90R450S, HCS90R800S, HCT70R1K1, HCT70R910, HCT80R850