All MOSFET. HCS80R1K4ST Datasheet

 

HCS80R1K4ST Datasheet and Replacement


   Type Designator: HCS80R1K4ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO220FT
 

 HCS80R1K4ST substitution

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HCS80R1K4ST Datasheet (PDF)

 ..1. Size:399K  semihow
 hcs80r1k4st.pdf pdf_icon

HCS80R1K4ST

Sep 2020HCS80R1K4ST800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.0 A Excellent stability and uniformityRDS(on), max 1.4 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.1 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL S

 4.1. Size:398K  semihow
 hcs80r1k4s.pdf pdf_icon

HCS80R1K4ST

Sep 2020HCS80R1K4S800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.0 A Excellent stability and uniformityRDS(on), max 1.4 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.1 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL Sw

 6.1. Size:397K  semihow
 hcs80r1k2s.pdf pdf_icon

HCS80R1K4ST

Sep 2020HCS80R1K2S800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.5 A Excellent stability and uniformityRDS(on), max 1.2 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 6.2. Size:399K  semihow
 hcs80r1k2st.pdf pdf_icon

HCS80R1K4ST

Sep 2020HCS80R1K2ST800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.5 A Excellent stability and uniformityRDS(on), max 1.2 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

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Datasheet: HCS70R180S , HCS70R230S , HCS70R600ST , HCS70R710ST , HCS70R910ST , HCS80R1K2S , HCS80R1K2ST , HCS80R1K4S , IRF1010E , HCS90R1K0S , HCS90R1K6S , HCS90R300S , HCS90R450S , HCS90R800S , HCT70R1K1 , HCT70R910 , HCT80R850 .

History: AOD558 | FQD2N50TF | AO6411 | IRFS631 | SE40160A | DMN3035LWN | KQB6N25

Keywords - HCS80R1K4ST MOSFET datasheet

 HCS80R1K4ST cross reference
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