HCS90R300S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HCS90R300S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO220FS

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HCS90R300S datasheet

 ..1. Size:543K  semihow
 hcs90r300s.pdf pdf_icon

HCS90R300S

Apr. 2023 HCS90R300S 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 14.5 A Excellent stability and uniformity RDS(on), max 0.3 100% Avalanche Tested Built-in ESD Diode Qg, Typ 43 nC Application Package & Internal Circuit TO-220FS SYMBOL S

 8.1. Size:544K  semihow
 hcs90r450s.pdf pdf_icon

HCS90R300S

Apr. 2023 HCS90R450S 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 10.7 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 29 nC Application Package & Internal Circuit TO-220FS SYMBOL

 8.2. Size:543K  semihow
 hcs90r1k0s.pdf pdf_icon

HCS90R300S

Apr. 2023 HCS90R1K0S 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 5.5 A Excellent stability and uniformity RDS(on), max 1.0 100% Avalanche Tested Built-in ESD Diode Qg, Typ 13.7 nC Application Package & Internal Circuit TO-220FS SYMBOL

 8.3. Size:544K  semihow
 hcs90r800s.pdf pdf_icon

HCS90R300S

Apr. 2023 HCS90R800S 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 6.7 A Excellent stability and uniformity RDS(on), max 0.8 100% Avalanche Tested Built-in ESD Diode Qg, Typ 17.4 nC Application Package & Internal Circuit TO-220FS SYMBOL

MOSTRAR MÁS

Otros transistores... HCS70R710ST, HCS70R910ST, HCS80R1K2S, HCS80R1K2ST, HCS80R1K4S, HCS80R1K4ST, HCS90R1K0S, HCS90R1K6S, AO3401, HCS90R450S, HCS90R800S, HCT70R1K1, HCT70R910, HCT80R850, HCT90R1K4, HCU60R260, HCU60R580