HCS90R300S Todos los transistores

 

HCS90R300S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HCS90R300S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO220FS
 

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HCS90R300S Datasheet (PDF)

 ..1. Size:543K  semihow
 hcs90r300s.pdf pdf_icon

HCS90R300S

Apr. 2023HCS90R300S900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 14.5 A Excellent stability and uniformityRDS(on), max 0.3 100% Avalanche Tested Built-in ESD DiodeQg, Typ 43 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.1. Size:544K  semihow
 hcs90r450s.pdf pdf_icon

HCS90R300S

Apr. 2023HCS90R450S900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 10.7 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 29 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL

 8.2. Size:543K  semihow
 hcs90r1k0s.pdf pdf_icon

HCS90R300S

Apr. 2023HCS90R1K0S900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 5.5 A Excellent stability and uniformityRDS(on), max 1.0 100% Avalanche Tested Built-in ESD DiodeQg, Typ 13.7 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL

 8.3. Size:544K  semihow
 hcs90r800s.pdf pdf_icon

HCS90R300S

Apr. 2023HCS90R800S900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 6.7 A Excellent stability and uniformityRDS(on), max 0.8 100% Avalanche Tested Built-in ESD DiodeQg, Typ 17.4 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL

MOSTRAR MÁS

Otros transistores... HCS70R710ST , HCS70R910ST , HCS80R1K2S , HCS80R1K2ST , HCS80R1K4S , HCS80R1K4ST , HCS90R1K0S , HCS90R1K6S , AO3400 , HCS90R450S , HCS90R800S , HCT70R1K1 , HCT70R910 , HCT80R850 , HCT90R1K4 , HCU60R260 , HCU60R580 .

 

 
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