All MOSFET. HCS90R300S Datasheet

 

HCS90R300S Datasheet and Replacement


   Type Designator: HCS90R300S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220FS
 

 HCS90R300S substitution

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HCS90R300S Datasheet (PDF)

 ..1. Size:543K  semihow
 hcs90r300s.pdf pdf_icon

HCS90R300S

Apr. 2023HCS90R300S900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 14.5 A Excellent stability and uniformityRDS(on), max 0.3 100% Avalanche Tested Built-in ESD DiodeQg, Typ 43 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.1. Size:544K  semihow
 hcs90r450s.pdf pdf_icon

HCS90R300S

Apr. 2023HCS90R450S900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 10.7 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 29 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL

 8.2. Size:543K  semihow
 hcs90r1k0s.pdf pdf_icon

HCS90R300S

Apr. 2023HCS90R1K0S900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 5.5 A Excellent stability and uniformityRDS(on), max 1.0 100% Avalanche Tested Built-in ESD DiodeQg, Typ 13.7 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL

 8.3. Size:544K  semihow
 hcs90r800s.pdf pdf_icon

HCS90R300S

Apr. 2023HCS90R800S900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 6.7 A Excellent stability and uniformityRDS(on), max 0.8 100% Avalanche Tested Built-in ESD DiodeQg, Typ 17.4 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL

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Datasheet: HCS70R710ST , HCS70R910ST , HCS80R1K2S , HCS80R1K2ST , HCS80R1K4S , HCS80R1K4ST , HCS90R1K0S , HCS90R1K6S , AO3401 , HCS90R450S , HCS90R800S , HCT70R1K1 , HCT70R910 , HCT80R850 , HCT90R1K4 , HCU60R260 , HCU60R580 .

History: VBFB165R07 | AM30N10-70DE | OSG65R900ATF | OSG65R900DF | FDPF14N30T | HCS90R800S | HCS80R1K4ST

Keywords - HCS90R300S MOSFET datasheet

 HCS90R300S cross reference
 HCS90R300S equivalent finder
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