HFP2N60F Todos los transistores

 

HFP2N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFP2N60F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 37 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
   Paquete / Cubierta: TO220
 

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HFP2N60F Datasheet (PDF)

 ..1. Size:391K  semihow
 hfp2n60f hfs2n60f.pdf pdf_icon

HFP2N60F

Oct 2016HFP2N60F / HFS2N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 2A Excellent Switching CharacteristicsRDS(on), Typ 3.6 100% Avalanche TestedQg, Typ 6.5 nC RoHS CompliantHFP2N60F HFS2N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles

 7.1. Size:210K  shantou-huashan
 hfp2n60.pdf pdf_icon

HFP2N60F

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP2N60 APPLICATIONSL TO-220 High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc=25

 7.2. Size:192K  semihow
 hfp2n60u.pdf pdf_icon

HFP2N60F

Nov 2013BVDSS = 600 VRDS(on) typ = HFP2N60U ID = 2 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower R

 7.3. Size:170K  semihow
 hfp2n60s.pdf pdf_icon

HFP2N60F

March 2014BVDSS = 600 VRDS(on) typ HFP2N60SID = 2.0 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area L

MOSTRAR MÁS

Otros transistores... HFD1N60SA , HFD2N60F , HFD5N60F , HFD5N65SA , HFH9N90A , HFI50N06A , HFI5N50S , HFI5N60S , AON6380 , HFP4N60F , HFP50N06A , HFP5N60F , HFP730F , HFP830F , HFS10N65JS , HFS10N80A , HFS12N65JS .

History: KDR8702H | KE3587-G | FK16UM-6 | IRF7854 | IRF7855 | FW389

 

 
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