HFS12N65SA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HFS12N65SA Datasheet (PDF)

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July 2021BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65SAID = 12 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 41 nC (Typ.) Extended Safe Ope

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Aug 2009BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65SID = 12 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E

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Mar. 2023HFS12N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 12 A Excellent Switching CharacteristicsRDS(on), Typ 0.7 100% Avalanche TestedQg, Typ 44.4 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum

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July 2014BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65UID = 12 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

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