HFS12N65SA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFS12N65SA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 51 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 85 nS
Cossⓘ - Capacitancia de salida: 183 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.78 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de HFS12N65SA MOSFET
HFS12N65SA Datasheet (PDF)
hfs12n65sa.pdf
July 2021BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65SAID = 12 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 41 nC (Typ.) Extended Safe Ope
hfs12n65s.pdf
Aug 2009BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65SID = 12 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E
hfs12n65js.pdf
Mar. 2023HFS12N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 12 A Excellent Switching CharacteristicsRDS(on), Typ 0.7 100% Avalanche TestedQg, Typ 44.4 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum
hfs12n65u.pdf
July 2014BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65UID = 12 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo
Otros transistores... HFP4N60F , HFP50N06A , HFP5N60F , HFP730F , HFP830F , HFS10N65JS , HFS10N80A , HFS12N65JS , MMIS60R580P , HFS18N50UT , HFS2N60F , HFS2N60FS , HFS3N80A , HFS4N60F , HFS4N60FS , HFS50N06A , HFS5N60F .
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