All MOSFET. HFS12N65SA Datasheet

 

HFS12N65SA Datasheet and Replacement


   Type Designator: HFS12N65SA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 43 nC
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 183 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
   Package: TO220F
 

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HFS12N65SA Datasheet (PDF)

 ..1. Size:806K  semihow
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HFS12N65SA

July 2021BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65SAID = 12 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 41 nC (Typ.) Extended Safe Ope

 5.1. Size:240K  semihow
 hfs12n65s.pdf pdf_icon

HFS12N65SA

Aug 2009BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65SID = 12 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E

 6.1. Size:598K  semihow
 hfs12n65js.pdf pdf_icon

HFS12N65SA

Mar. 2023HFS12N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 12 A Excellent Switching CharacteristicsRDS(on), Typ 0.7 100% Avalanche TestedQg, Typ 44.4 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum

 6.2. Size:158K  semihow
 hfs12n65u.pdf pdf_icon

HFS12N65SA

July 2014BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65UID = 12 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

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History: HFS10N80A

Keywords - HFS12N65SA MOSFET datasheet

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