HFS730S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFS730S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46 nS

Cossⓘ - Capacitancia de salida: 86 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: TO220F

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HFS730S datasheet

 ..1. Size:281K  semihow
 hfs730s.pdf pdf_icon

HFS730S

May 2015 BVDSS = 400 V RDS(on) typ = 0.75 HFS730S ID = 6.0 A 400V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 17 nC (Typ.) Extended Safe Operating Area Lo

 8.1. Size:404K  semihow
 hfp730f hfs730f.pdf pdf_icon

HFS730S

Dec 2016 HFP730F / HFS730F 400V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 400 V Very Low Intrinsic Capacitances ID 6A Excellent Switching Characteristics RDS(on), Typ 0.8 100% Avalanche Tested Qg, Typ 13 nC RoHS Compliant HFP730F HFS730F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unless oth

 8.2. Size:258K  semihow
 hfs730.pdf pdf_icon

HFS730S

Dec 2005 BVDSS = 400 V RDS(on) typ HFS730 ID = 5.5 A 400V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 18 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

 8.3. Size:194K  semihow
 hfs730u.pdf pdf_icon

HFS730S

Oct 2013 BVDSS = 400 V RDS(on) typ = 0.75 HFS730U ID = 6.0 A 400V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.) Extended Safe Operating Area Lo

MOSTRAR MÁS

Otros transistores... HFS3N80A, HFS4N60F, HFS4N60FS, HFS50N06A, HFS5N60F, HFS5N65JS, HFS5N65SA, HFS730F, AOD4184A, HFS7N80A, HFS830F, HFS8N60UA, HFS8N65JS, HFS8N65SA, HFS9N90A, HFT1N60F, HFU1N60F