HFS730S Datasheet. Specs and Replacement

Type Designator: HFS730S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220F

HFS730S substitution

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HFS730S datasheet

 ..1. Size:281K  semihow
 hfs730s.pdf pdf_icon

HFS730S

May 2015 BVDSS = 400 V RDS(on) typ = 0.75 HFS730S ID = 6.0 A 400V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 17 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

 8.1. Size:404K  semihow
 hfp730f hfs730f.pdf pdf_icon

HFS730S

Dec 2016 HFP730F / HFS730F 400V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 400 V Very Low Intrinsic Capacitances ID 6A Excellent Switching Characteristics RDS(on), Typ 0.8 100% Avalanche Tested Qg, Typ 13 nC RoHS Compliant HFP730F HFS730F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unless oth... See More ⇒

 8.2. Size:258K  semihow
 hfs730.pdf pdf_icon

HFS730S

Dec 2005 BVDSS = 400 V RDS(on) typ HFS730 ID = 5.5 A 400V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 18 nC (Typ.) Extended Safe Operating Area Lower RDS(ON... See More ⇒

 8.3. Size:194K  semihow
 hfs730u.pdf pdf_icon

HFS730S

Oct 2013 BVDSS = 400 V RDS(on) typ = 0.75 HFS730U ID = 6.0 A 400V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

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Detailed specifications: HFS3N80A, HFS4N60F, HFS4N60FS, HFS50N06A, HFS5N60F, HFS5N65JS, HFS5N65SA, HFS730F, AOD4184A, HFS7N80A, HFS830F, HFS8N60UA, HFS8N65JS, HFS8N65SA, HFS9N90A, HFT1N60F, HFU1N60F

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