HFS8N60UA Datasheet. Equivalente

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 hfs8n60ua.pdf

July 2021 BVDSS = 600 V RDS(on) typ = 0.96 HFS8N60UA ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe

 6.1. Size:308K  semihow
 hfs8n60u.pdf

August 2012 BVDSS = 600 V RDS(on) typ HFS8N60U ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Are

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 hfs8n60s.pdf

Dec 2006 BVDSS = 600 V RDS(on) typ HFS8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lower RDS

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 hfs8n65u.pdf

March 2013 BVDSS = 650 V RDS(on) typ HFS8N65U ID = 7.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area

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 hfs8n65s.pdf

Sep 2009 BVDSS = 650 V RDS(on) typ = 1.16 HFS8N65S ID = 7.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Unrivalled Gate Charge 22 nC (Typ ) E

 8.3. Size:736K  semihow
 hfs8n65sa.pdf

August 2022 BVDSS = 650 V RDS(on) typ = 1.16 HFS8N65SA ID = 7.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 21 nC (Typ.) Extended Safe O

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 hfs8n65js.pdf

Mar. 2023 HFS8N65JS 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 7.2 A Excellent Switching Characteristics RDS(on), Typ 1.04 100% Avalanche Tested Qg, Typ 25.3 nC RoHS Compliant TO-220FS Symbol S D G Absolute Maximum