HFS8N60UA Datasheet. Specs and Replacement

Type Designator: HFS8N60UA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220F

HFS8N60UA substitution

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HFS8N60UA datasheet

 ..1. Size:660K  semihow
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HFS8N60UA

July 2021 BVDSS = 600 V RDS(on) typ = 0.96 HFS8N60UA ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe ... See More ⇒

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HFS8N60UA

August 2012 BVDSS = 600 V RDS(on) typ HFS8N60U ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Are... See More ⇒

 7.1. Size:180K  semihow
hfs8n60s.pdf pdf_icon

HFS8N60UA

Dec 2006 BVDSS = 600 V RDS(on) typ HFS8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lower RDS... See More ⇒

 8.1. Size:307K  semihow
hfs8n65u.pdf pdf_icon

HFS8N60UA

March 2013 BVDSS = 650 V RDS(on) typ HFS8N65U ID = 7.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area... See More ⇒

Detailed specifications: HFS50N06A, HFS5N60F, HFS5N65JS, HFS5N65SA, HFS730F, HFS730S, HFS7N80A, HFS830F, IRFP064N, HFS8N65JS, HFS8N65SA, HFS9N90A, HFT1N60F, HFU1N60F, HFU1N60S, HFU1N60SA, HFU2N60F

Keywords - HFS8N60UA MOSFET specs

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