HFU5N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFU5N40
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 45 W
Voltaje máximo drenador - fuente |Vds|: 400 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 3.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 13 nC
Tiempo de subida (tr): 70 nS
Conductancia de drenaje-sustrato (Cd): 70 pF
Resistencia entre drenaje y fuente RDS(on): 1.6 Ohm
Paquete / Cubierta: IPAK
Búsqueda de reemplazo de MOSFET HFU5N40
HFU5N40 Datasheet (PDF)
hfd5n40 hfu5n40.pdf
July 2005BVDSS = 400 VRDS(on) typ HFD5N40 / HFU5N40ID = 3.4 A400V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD5N40 HFU5N40 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ
hfd5n60s hfu5n60s.pdf
June 2015BVDSS = 600 VRDS(on) typ HFD5N60S / HFU5N60SID = 4.3 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD5N60S HFU5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC
hfd5n50s hfu5n50s.pdf
OCT 2009BVDSS = 500 VRDS(on) typ HFD5N50S / HFU5N50SID = 4.0 A500V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD5N50S HFU5N50S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC
hfd5n60u hfu5n60u.pdf
June 2015BVDSS = 600 VRDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC
hfd5n50u hfu5n50u.pdf
June 2015BVDSS = 500 VRDS(on) typ HFD5N50U / HFU5N50U ID = 4.0 A500V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD5N50U HFU5N50U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC
hfu5n65sa hfd5n65sa.pdf
May. 2022HFU5N65SA / HFD5N65SA650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 4.2 A Excellent Switching CharacteristicsRDS(on), Typ 2.3 100% Avalanche TestedQg, Typ 14.2 nC RoHS CompliantHFU5N65SA HFD5N65SASymbolTO
hfu5n60f hfd5n60f.pdf
Oct 2016HFU5N60F / HFD5N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 5A Excellent Switching CharacteristicsRDS(on), Typ 1.8 100% Avalanche TestedQg, Typ 12.5 nC RoHS CompliantHFU5N60F HFD5N60FSymbolTO-251 TO-252DSSDGGAbsolute Maximum Ratings TC=25 unles
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