HFU5N40 Datasheet. Equivalente

 ..1. Size:199K  semihow
 hfd5n40 hfu5n40.pdf

July 2005 BVDSS = 400 V RDS(on) typ HFD5N40 / HFU5N40 ID = 3.4 A 400V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N40 HFU5N40 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ

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 hfd5n60s hfu5n60s.pdf

June 2015 BVDSS = 600 V RDS(on) typ HFD5N60S / HFU5N60S ID = 4.3 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N60S HFU5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC

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 hfd5n50s hfu5n50s.pdf

OCT 2009 BVDSS = 500 V RDS(on) typ HFD5N50S / HFU5N50S ID = 4.0 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N50S HFU5N50S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15.5 nC

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 hfd5n60u hfu5n60u.pdf

June 2015 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC

 9.4. Size:287K  semihow
 hfd5n50u hfu5n50u.pdf

June 2015 BVDSS = 500 V RDS(on) typ HFD5N50U / HFU5N50U ID = 4.0 A 500V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N50U HFU5N50U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC

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 hfu5n65sa hfd5n65sa.pdf

May. 2022 HFU5N65SA / HFD5N65SA 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 4.2 A Excellent Switching Characteristics RDS(on), Typ 2.3 100% Avalanche Tested Qg, Typ 14.2 nC RoHS Compliant HFU5N65SA HFD5N65SA Symbol TO

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 hfu5n60f hfd5n60f.pdf

Oct 2016 HFU5N60F / HFD5N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 5A Excellent Switching Characteristics RDS(on), Typ 1.8 100% Avalanche Tested Qg, Typ 12.5 nC RoHS Compliant HFU5N60F HFD5N60F Symbol TO-251 TO-252 D S S D G G Absolute Maximum Ratings TC=25 unles